UNISONIC TECHNOLOGIES CO., LTD 1N60A
0.5 Amps, 600/650 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 1N60A is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
Power MOSFET
FEATURES
* RDS(ON) =15Ω@VGS = 10V. * Ultra Low gate charge (typical 8.0nC) * Low reverse transfer capacitance (CRSS = 3.0 pF(max)) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 1N60AL-x-T92-B 1N60AG-x-T92-B 1N60AL-x-T92-K 1N60AG-x-T92-K Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-92 TO-92 Pin Assignment 1 2 3 G D S G D S Packing Tape Box Bulk
www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-091,E
1N60A
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified.)
PARAMETER SYMBOL 1N60A-A 1N60A-B RATINGS 600 650 ±30 0.5 2 50
Power MOSFET
UNIT V Drain-Source Voltage VDSS V Gate-Source Voltage VGSS V Continuous Drain Current ID A Pulsed Drain Current (Note 2) IDM A Single Pulse(Note 3) EAS mJ Avalanche Energy Repetitive(Note 2) EAR 3.6 4.0 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation (TC=25°C) 3 W PD Derate above 25°C 25 mW/°C Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. L=92mH, IAS=0.8A, VDD=50V, RG=0Ω, Starting TJ=25°C 4. ISD≤1.0A, di/dt≤100A/μs, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER Junction to Ambient SYMBOL θJA MIN TYP MAX 120 UNIT °C/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified.)
PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current 1N60A-A 1N60A-B SYMBOL BVDSS IDSS TEST CONDITIONS VGS = 0V, ID = 250μA MIN TYP MAX UNIT 600 650 10 100 -100 0.4 2.0 11 4.2 15 100 20 3 12 11 40 18 8 1.8 4.0 34 32 90 46 10 V V μA nA nA V/°C V Ω pF pF pF ns ns ns ns nC nC nC
Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS = 600V, VGS = 0V Forward VGS = 20V, VDS = 0V IGSS Reverse VGS = -20V, VDS = 0V ID = 250μA △BVDSS/△TJ referenced to 25°C VGS(TH) RDS(ON) CISS COSS CRSS tD (ON) tR tD (OFF) tF QG QGS QGD VDS = VGS, ID = 250μA VGS = 10V, ID = 0.5A
VDS=25V, VGS=0V, f=1MHz
VDD=300V, ID=0.5A, RG=5Ω (Note 1,2)
VDS=480V, VGS=10V, ID=0.8A (Note 1,2)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-091,E
1N60A
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V, ISD = 1.2A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS=0V, ISD = 1.2A di/dt = 100A/μs Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% 2. Essentially independent of operating temperature. MIN
Power MOSFET
TYP
MAX 1.6 1.2 4.8
UNIT V A A ns μC
136 0.3
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-091,E
1N60A
TEST CIRCUITS AND WAVEFORMS
+ VDS + L
Power MOSFET
D.U.T.
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period
VGS= 10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv/dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 8
QW-R502-091,E
1N60A
TEST CIRCUITS AND WAVEFORMS (Cont.)
RL VDD VDS VGS RG 10%
tD(ON) tR
Power MOSFET
VDS
90%
10V
Pulse Width≤ 1μs Duty Factor≤0.1%
D.U.T.
VGS
tD(OFF) tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
12V
50kΩ 0.2μF VGS 0.3μF
Same Type as D.U.T. VDS
10V QGS
QG
QGD
DUT 1mA
VGS
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
BVDSS IAS
ID(t) VDD
VDS(t)
tp
Time
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-091,E
1N60A
TYPICAL CHARACTERISTICS
Output Characteristics
VGS Top: 15.0V 10.0V 8.0V 7.0V 6.0V 5.5V 5V Bottorm:4.5V
Power MOSFET
Transfer Characteristics VDS=50V 250μs Pulse Test
100 Drain Current, ID (A)
4.5V
Drain Current, ID (A)
100
10-1 100
250μs Pulse Test TC=25°C 101 Drain-Source Voltage, VDS (V) On-Resistance vs. Drain Current TJ=25°C Reverse Drain Current, IDR (A)
10-1 2 4 6 8 Gate-Source Voltage, VGS (V) Source- Drain Diode Forward Voltage VGS=0V 250μs Pulse Test 10
Drain-Source On-Resistance, RDS(ON) (Ω)
30 25 20 15 10 5 0
VGS=10V VGS=20V
100
10-1 0.0 0.5 1.5 1.0 Drain Current, ID (A) 2.0 2.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source-Drain Voltage, VSD (V) 1.6
200
Capacitance vs. Drain-Source Voltage
CISS=CGS+CGD (CDS=shorted) COSS=CDS+CGD CRSS=CGD
12 Gate-Source Voltage, VGS (V) 10 8 6 4 2 0
Gate Charge vs. Gate-Source Voltage VDS=480V VDS=300V VDS=120V
150 Capacitance (pF)
CISS
COSS 100
50 VGS=0V f = 1MHz 10
-1
CRSS
0
ID=1.0A 0 2 6 4 8 Total Gate Charge, QG (nC) 10
10 10 Drain-SourceVoltage, VDS (V)
0
1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-091,E
1N60A
TYPICAL CHARACTERISTICS (Cont.)
Breakdown Voltage vs. Temperature Drain-Source Breakdown Voltage, BVDSS, (Normalized) 1.2 Drain-Source On-Resistance, RDS(ON) (Normalized) VGS=0V ID=250μA 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -100 0 100 150 -50 50 Junction Temperature, TJ (°C) 200 -100
Power MOSFET
On-Resistance vs. Temperature VGS=10V ID=0.5A
1.1
1.0
0.9
0.8
-50 50 100 150 0 Junction Temperature, TJ (°C)
200
Max. Safe Operating Area Operation in This Area is Limited by RDS(on) Drain Current, ID (A) 100μs 100 1ms 10ms 1.0
Max. Drain Current vs. Case Temperature
10 Drain Current, ID (A)
1
0.5
10-1 Tc=25°C TJ=150°C Single Pulse 100 101 102 Drain-Source Voltage, VDS (V) Thermal Response 103
10-2
0.0 25 50 125 100 75 Case Temperature, TC (°C)
150
Thermal Response, θJC (t)
0.5 10
0
0.2 0.1
0.0 5
θJC (t) = 3.45°C/W Max. Duty Factor, D=t1/t2 TJM-TC=PDM×θJC (t)
10
-1
2 0.0 1 0.0
Single pulse
10-5
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration, t1 (sec)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 8
QW-R502-091,E
1N60A
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
8 of 8
QW-R502-091,E
