1N70L-T92-K

UNISONIC TECHNOLOGIES CO., LTD 1N70 1.2 Amps, 700 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 1N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. Power MOSFET FEATURES * RDS(ON) =11.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness *Pb-free plating product number: 1N70L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating 1N70-T92-B 1N70L-T92-B 1N70-T92-K 1N70L-T92-K Package TO-92 TO-92 Pin Assignment 1 2 3 G D S G D S Packing Tape Box Bulk www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-171,A 1N70 ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 1.2 A Continuous Drain Current ID 1.2 A Pulsed Drain Current (Note 1) IDM 4.8 A Single Pulsed (Note 2) EAS 50 mJ Avalanche Energy 4.0 mJ Repetitive (Note 1) EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation PD 3 W Junction Temperature TJ +150 ℃ ℃ Operating Temperature TOPR -55 ~ +150 Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL θJA θJc RATINGS 79 29 UNIT ℃/W ℃/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-171,A 1N70 ELECTRICAL CHARACTERISTICS (TC=25℃, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS = 0V, ID = 250µA VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Power MOSFET MIN TYP MAX UNIT 700 10 100 -100 0.4 2.0 4.0 9.3 11.5 120 150 20 25 3.0 4.0 5 25 7 25 5.0 1.0 2.6 20 60 25 60 6.0 V µA nA nA V/℃ V Ω pF pF pF ns ns ns ns nC nC nC V A A ns µC Breakdown Voltage Temperature △BVDSS/△TJ ID = 250µA Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 0.6A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD=300V, ID=1.2A, RG=50Ω Turn-On Rise Time tR (Note 4,5) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=480V, VGS=10V, ID=1.2A Gate-Source Charge QGS (Note 4,5) Gate-Drain Charge QGD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS=0V, IS = 1.2A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS=0V, IS = 1.2A dIF/dt = 100A/µs (Note1) Reverse Recovery Charge QRR Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 1.2A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse Width ≤300µs, Duty Cycle≤2% 5. Essentially Independent of Operating Temperature 1.4 1.2 4.8 160 0.3 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-171,A 1N70 TEST CIRCUITS AND WAVEFORMS Power MOSFET D.U.T. + VDS - + L RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-171,A 1N70 TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD ID(t) VDS(t) 10V Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-171,A 1N70 TYPICAL CHARACTERISTICS Output Characteristics VGS 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V Bottorm:5.5V Top: Power MOSFET Transfer Characteristics VDS=50V 250μs Pulse Test 10 0 100 125℃ 25℃ -40℃ 10-1 10-2 10-1 100 250μs Pulse Test TC=25℃ 101 10-1 2 4 6 8 10 Drain-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V) On-Resistance vs. Drain Current Drain-Source On-Resistance, RDS(ON) (Ω) 30 25 20 15 10 5 0 TJ=25℃ VGS=10V VGS=20V Reverse Drain Current, IDR (A) Source- Drain Diode Forward Voltage VGS=0V 250μs Pulse Test 100 125℃ 25℃ 0.0 0.5 1.0 1.5 2.0 2.5 10-1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain Current, ID (A) Source-Drain Voltage, VSD (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Gate-Source Voltage, VGS (V) Capacitance (pF) 6 of 8 QW-R502-171,A 1N70 TYPICAL CHARACTERISTICS(Cont.) Power MOSFET Drain-Source Breakdown Voltage, BVDSS, (Normalized) (V) Drain-Source On-Resistance, RDS(ON) (Normalized) (Ω) Max. Safe Operating Area Operation in This Area is Limited by RDS(on) Drain Current, ID (A) 100μs Drain Current, ID (A) 1ms 100 10ms DC 1.2 Max. Drain Current vs. Case Temperature 101 0.9 0.6 10-1 Tc=25℃ TJ=150℃ Single Pulse 10-2 100 101 102 103 0.3 0.0 25 50 75 100 125 150 Drain-Source Voltage, VDS (V) Case Temperature, TC (℃) Thermal Response, θJC (t) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-171,A 1N70 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-171,A