25N10L-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 25N10 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC’s perfect technology to provide designers with fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It is generally suitable for all commercial-industrial applications and DC/DC converters requiring low voltage. FEATURES * Single Drive Requirement * Low Gate Charge * RoHS Compliant SYMBOL ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free 25N10L-TN3-R 25N10G-TN3-R Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-448.a 25N10 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain Source Voltage Gate Source Voltage Preliminary Power MOSFET SYMBOL RATINGS UNIT VDSS 100 V VGSS ±20 V TC =25°C ID 23 A Continuous Drain Current (VGS=10V) TC = 100°C ID 14.6 A Pulsed Drain Current (Note 2) IDM 80 A Total Power Dissipation (TC =25°C) PD 41 W Operating Junction Temperature TJ -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by max. junction temperature THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 100 3 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current SYMBOL BVDSS TEST CONDITIONS VGS =0V, ID =1mA MIN 100 0.14 25 100 ±100 2 14 1060 1700 270 8 1.5 2.3 19 5 6 10 28 17 2 30 4 80 TYP MAX UNIT V V/°C µA µA nA V mΩ S pF pF pF Ω nC nC nC ns ns ns ns V ns nC ΔBVDSS/ΔTJ Reference to 25°C , ID =1mA IDSS VDS =100V, VGS =0V, TJ=25°C VDS =80V, VGS =0V,TJ =150°C VGS =±20V Gate-Source Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID =250µA Static Drain-Source On-Resistance (Note) RDS(ON) VGS =10V, ID =16A Forward Transconductance gFS VDS =10V, ID =16A DYNAMIC PARAMETERS Input Capacitance CISS VDS =25V, VGS=0V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG f=1.0MHz SWITCHING PARAMETERS Total Gate Charge (Note) QG VGS=10V, VDS=80V, ID=16A Gate Source Charge QGS Gate Drain Charge QGD Turn-ON Delay Time1 tD(ON) Turn-ON Rise Time tR VDD=50V, ID=16A, RG=3.3Ω, VGS=10V, RD=3.125Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage (Note) VSD IS =16A, VGS =0V Reverse Recovery Time tRR =16A,VGS =0V, IS dI/dt=100A/µs Reverse Recovery Charge QRR Note: Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 1.3 90 380 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 3 QW-R502-448.a 25N10 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-448.a