2N2955-T30-K

UNISONIC TECHNOLOGIES CO., LTD 2N2955 SILICON PNP TRANSISTORS DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in TO-3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. 1 TO-3 PNP SILICON TRANSISTOR *Pb-free plating product number:2N2955L ORDERING INFORMATION Order Number Normal Lead Free Plating 2N2955-T30-K 2N2955L-T30-K Note: 3: Case 2N2955L-T30-K (1)Packing Type (2)Package Type (3)Lead Plating (1) K: Bulk (2) T30: TO-3 (3) L: Lead Free Plating, Blank: Pb/Sn Package TO-3 Pin Assignment 1 2 3 E B C Packing Bulk www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 2 QW-R205-004,B 2N2955 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS SYMBOL RATINGS UNITS Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7 V Collector-Emitter Voltage VCEV 70 V Collector Current IC 15 A Collector Peak Current(1) ICM 15 A Base Current IB 7 A Base Peak Current(1) IBM 15 A Total Dissipation at Ta=25°C PD 115 W Max. Operating Junction Temperature TJ +200 °C Storage Temperature TSTG -65 ~ 200 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current ON CHARACTERISTICS DC Current Gain(Note) SYMBOL TEST CONDITIONS MIN 60 70 0.7 1.0 5.0 5.0 20 5 70 1.1 3.0 1.5 2.87 2.5 15 10 V V A MHz 120 kHz TYP MAX UNIT V V mA mA mA VCEO(SUS) IC=200mA, IB=0V VCER(SUS) IC=0.2 A, RBE=100Ω ICEO ICEX IEBO hFE VCE=30V,IB=0 VCE=100V, VBE(OFF)=1.5V VCE=100V, VBE(OFF)=1.5V, Ta=150°C VBE=7V, IC=0 IC=4A,VCE=4V, IC=10A,VCE=4V IC=4A, IB=400mA IC=10A, IB=3.3A IC=4A, VCE=4V Collector-Emitter Saturation VCE(SAT) Voltage Base-Emitter On Voltage VBE(ON) SECOND BREAKDOWN Second Breakdown Collector with Is/b VCE=60V, T=1.0s, Non-repetitive Base Forward Biased DYNAMIC CHARACTERISTICS Current Gain-Bandwidth Product fT IC=0.5A, VCE=10V, f=1MHz Small-Signal Current Gain hFE IC=1A, VCE=4V, f=1kHz Small-Signal Current Gain fhFE IC=1A, VCE=4V, f=1kHz Cut-off Frequency Note(1):Pulse Test: PW≦300µs, Duty Cycle≦2% UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 2 QW-R205-004,B