2N3055

UTC 2N3055 SILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3 metal case. It is intended for power switching circuits, SILICON NPN TRANSISTOR series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETERS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Collector Peak Current(1) Base Current Base Peak Current(1) Total Dissipation at Ta=25°C Storage Temperature Max. Operating Junction Temperature SYMBOL VCBO VCEO VEBO VCEV Ic ICM IB IBM Ptot TSTG Tj VALUE 100 60 7 70 15 15 7 15 115 -65 to 200 200 UNITS V V V V A A A A W °C °C ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current SYMBOL VCEO(sus) VCER(sus) ICEO ICEX TEST CONDITIONS Ic=200mA, IB=0V Ic=0.2 A, RBE=100 Ohms VCE=30V,IB=0 VCE=100V,VBE(off)=1.5V. VCE=100V,VBE(off)=1.5V, Ta=150°C VBE=7V,IC=0 Ic=4A,VCE=4V, Ic=10A,VCE=4V Ic=4A,IB=400mA Ic=10A,IB=3.3A MIN 60 70 TYP MAX UNIT V V mA mA 0.7 1.0 5.0 5.0 20 5 70 1.1 3.0 Emitter Cut-off Current ON CHARACTERISTICS DC Current Gain(note) Collector-Emitter Saturation Voltage IEBO hFE VCE(sat) mA V UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R205-003,A UTC 2N3055 PARAMETER SYMBOL SILICON NPN TRANSISTOR TEST CONDITIONS MIN TYP MAX 1.5 UNIT V A Base-Emitter On Voltage VBE(on) Ic=4A,VCE=4V SECOND BREAKDOWN Second Breakdown Collector with Is/b VCE=60V,T=1.0s, Non-repetitive 2.87 Base Forward Biased DYNAMIC CHARACTERISTICS Current Gain-Bandwidth Product fT Ic=0.5A,VCE=10V,f=1MHz 2.5 Small-Signal Current Gain hFE Ic=1A,VCE=4V,f=1kHz 15 Small-Signal Current Gain fHFE Ic=1A,VCE=4V 10 Cut-off Frequency F=1.0kHz Note(1):Pulse Test: Puls Width