2N3904G-T92-B

UNISONIC TECHNOLOGIES CO., LTD 2N3904 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  FEATURES * Collector-Emitter Voltage: VCEO=40V * Complementary to 2N3906  FEATURES  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2N3904L-AB3-R 2N3904G-AB3-R SOT-89 2N3904L-T92-B 2N3904G-T92-B TO-92 2N3904L-T92-K 2N3904G-T92-K TO-92 Note: Pin Assignment: B: Base C: Collector E: Emitter  Pin Assignment 1 2 3 B C E E B C E B C Packing Tape Reel Tape Box Bulk MARKING SOT-89 www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd TO-92 1 of 4 QW-R201-027.G 2N3904  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current RATINGS UNIT 60 V 40 V 6 V 200 mA SOT-89 500 Collector Dissipation PC mW TO-92 625 Junction Temperature TJ +150 °С Operating and Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  SYMBOL VCBO VCEO VEBO IC THERMAL DATA PARAMETER Junction to Ambient Junction to Case  SYMBOL SOT-89 TO-92 SOT-89 TO-92 θJA θJC RATING 220 200 38 83.3 UNIT °C/W °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage (Note) SYMBOL TEST CONDITIONS BVCBO IC=10A, IE=0 BVCEO IC=1mA,IB=0 (Note) BVEBO IE=10A, IC=0 VCE(SAT)1 IC=10mA, IB=1mA VCE(SAT)2 IC=50mA, IB=5mA Base-Emitter Saturation Voltage VBE(SAT)1 IC=10mA, IB=1mA (Note) VBE(SAT)2 IC=50mA, IB=5mA Collector Cut-off Current ICBO VCE=30V, VEB=3V Base Cut-off Current IBL VCE=30V, VEB=3V hFE1 VCE=1V, IC=0.1mA hFE2 VCE=1V, IC=1mA DC Current Gain (note) hFE3 VCE=1V, IC=10mA hFE4 VCE=1V, IC=50mA hFE5 VCE=1V, IC=100mA Current Gain Bandwidth Product fT VCE=20V, IC=10mA, f=100MHz Output Capacitance COB VCB=5V, IE=0, f=1MHz Turn on Time tON VCC=3V,VBE=0.5V,IC=10mA, IB1=1mA Turn off Time tOFF IB1=1B2=1mA Note: Pulse test: Pulse Width≦300s, Duty Cycle≦2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 60 V 40 V 6 V 0.2 V 0.3 V 0.65 0.85 V 0.95 V 50 nA 50 nA 40 70 100 300 60 30 300 MHz 4 pF 70 ns 250 ns 2 of 4 QW-R201-027.G 2N3904 hFE vs. IC DC Current Gain, hFE 240 200 VCE=1V 160 120 80 40 0 0.1 0.3 0.5 1 3 5 10 30 50100 fT vs. IC 1000 500 300 VCE=20V 100 50 30 10 0.1 0.3 0.5 1 3 5 10 30 50100 Collector Current, IC (mA) Voltage, V(V) Capacitance, COB (pF) Saturation Voltage, VBE(SAT), VCE(SAT) Collector Current, IC (mA) Current Gain-Bandwidth Product, fT (MHz) TYPICAL CHARACTERISTICS Voltage, V(V)  NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R201-027.G 2N3904  NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-027.G