2N3906

UTC 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc(max)=625mW *Complementary to 2N3904 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base Current Collector dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic IB Pc Tj TSTG RATING -40 -40 -5 -200 -50 625 150 -55 ~ +150 UNIT V V V mA mA mW °C °C ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified) PARAMETER Collector Cut-off Current Base Cut-off Current Collector-base breakdown voltage Collector-emitter breakdown voltage (note) Emitter-base breakdown voltage DC current gain (note) SYMBOL ICEX IBL VCBO VCEO VEBO hFE1 hFE2 hFE3 hFE4 hFE5 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT TEST CONDITIONS VCE=-30V, VEB=-3V VCE=-30V, VEB=-3V Ic=-10µA,IE=0 Ic=-1mA,IB=0 MIN TYP MAX -50 -50 UNIT nA nA V V V -40 -40 Collector-emitter saturation voltage (note) Base-emitter saturation voltage Transition voltage IE=-10µA, Ic=0 -6 60 VCE=-1V,Ic=-0.1mA 80 VCE=-1V,Ic=-1mA 100 VCE=-1V,Ic=-10mA VCE=-1V,Ic=-50mA 60 30 VCE=-1V,Ic=-100mA Ic=-10mA,IB=-1mA Ic=-50mA,IB=-5mA Ic=-10mA,IB=-1mA -0.65 Ic=-50mA,IB=-5mA VCE=-20V,Ic=-10mA,f=100MHz 250 300 -0.25 -0.4 -0.85 -0.95 V V MHz UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-028,A UTC 2N3906 PARAMETER Output capacitance Turn on time PNP EPITAXIAL PLANAR TRANSISTOR SYMBOL Cob tON TEST CONDITIONS VCB=-5V,IE=0, f=1MHz Vcc=-3V, VBE=-0.5V, Ic=-10mA, IB1=-1mA IB1=1B2=-1mA MIN TYP MAX 4.5 70 300 UNIT pF ns ns Turn off time tOFF Note: Pulse test: PW