2N40G-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 2N40 Preliminary Power MOSFET 2 Amps, 400 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching performance. It also can withstand high energy pulse in the avalanche. The UTC 2N40 is usually used in general purpose switching applications, motor control circuits and switched mode power supply. FEATURES * High switching speed * 2A, 400V, RDS(ON)=3.5Ω @ VGS=10V * 100% avalanche tested SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N40L-TA3-T 2N40G-TA3-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220 1 G Pin Assignment 2 3 D S Packing Tube Note: www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-524.a 2N40 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Continuous ID 2 A Drain Current 7 A Pulsed IDM Avalanche Current IAR 2.5 A Single Pulsed Avalanche Energy EAS 100 mJ Power Dissipation PD 25 W Linear Derating Factor △PD/△Tmb 0.2 W/°C Junction Temperature TJ 150 °C Storage Temperature Range TSTG -55~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62.5 5 UNIT °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-524.a 2N40 PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Forward Gate- Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall-Time Internal Drain Inductance Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) SYMBOL BVDSS TEST CONDITIONS ID=250µA, VGS=0V MIN TYP MAX UNIT 400 0.45 V V/°C △BVDSS/△TJ VDS=VGS, ID=250µA IDSS IGSS VGS(TH) RDS(ON) CISS COSS CRSS QG(TOT) QGS QGD tD(ON) tR tD(OFF) tF LD VDS=400V, VGS=0V VGS=+30V, VDS=0V VGS=-30V, VDS=0V VDS=VGS, ID=250µA VGS=10V, ID=1.25A 2.0 1 25 µA +10 +200 nA -10 -200 nA 3.0 2.0 240 44 26 20 2 8 10 25 46 25 4.5 25 3 12 4.0 3.5 V Ω pF pF pF nC nC nC ns ns ns ns nH VGS=0V, VDS=25V, f=1.0MHz VGS=10V, VDS=320V, ID=2.5A VDD=200V, ID=2.5A, RG=24Ω, RD=78 Ω Internal Source Inductance LS Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad 7.5 nH SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS TC=25°C Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=2.5A, VGS=0V Body Diode Reverse Recovery Time tRR IS=2.5A, VGS=0V, dI/dt=100A/µs Body Diode Reverse Recovery Charge QRR 2.5 10 1.2 200 2.0 A A V ns µC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-524.a 2N40 Gate Charge Test Circuit Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Gate Charge Waveforms VGS QG Same Type as DUT 12V 200nF 50kΩ VGS DUT 3mA 300nF VDS 10V QGS QGD Charge Unclamped Inductive Switching Test Circuit VDS RG ID Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD 10V tP DUT VDD VDD VDS(t) Time tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-524.a 2N40 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT RG + VDS L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-524.a 2N40 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-524.a