2N5401L-C-AB3-R

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2N5401L-C-AB3-R - HIGH VOLTAGE SWITCHING TRANSISTOR - Unisonic Technologies

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2N5401L-C-AB3-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD 2N5401 HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain PNP SILICON TRANSISTOR 1 SOT-89 1 TO-92 *Pb-free plating product number:2N5401L ORDERING INFORMATION Order Number Normal Lead Free Plating 2N5401-x-AB3-R 2N5401L-x-AB3-R 2N5401-x-T92-B 2N5401L-x-T92-B 2N5401-x-T92-K 2N5401L-x-T92-K Package SOT-89 TO-92 TO-92 Pin Assignment 1 2 3 B C E E B C E B C Packing Tape Reel Tape Box Bulk 2N5401L-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) AB3: SOT-89, T92: TO-92 (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R201-001,D 2N5401 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified) RATINGS UNIT -160 V -150 V -5 V -600 mA TO-92 625 mW Collector Dissipation PC SOT-89 500 mW ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO IC ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain(Note) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(SAT) VBE(SAT) fT Cob NF TEST CONDITIONS Ic = -100µA, IE = 0 Ic = -1mA, IB = 0 IE = -10µA, Ic = 0 VCB = -120V, IE = 0 VEB = -3V, Ic = 0 VCE = -5V, Ic = -1mA VCE = -5V, Ic = -10mA VCE = -5V, Ic = -50mA Ic = -10mA, IB = -1mA Ic = -50mA, IB = -5mA Ic = -10mA, IB = -1mA Ic = -50mA, IB = -5mA VCE = -10V, Ic = -10mA f = 100MHz VCB = -10V, IE = 0, f = 1MHz Ic = -0.25mA, VCE = -5V Rs = 1kΩ, f = 10Hz ~ 15.7kHz MIN -160 -150 -6 TYP MAX UNIT V V V nA nA -50 -50 80 80 80 400 -0.2 -0.5 -1 -1 100 400 6.0 8 V V MHz pF dB Note: Pulse test: PW

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2N5401L-C-AB3-R

### 物料型号 - 型号：2N5401 - 铅免费镀层产品型号：2N5401L

### 器件简介 2N5401是一款PNP硅晶体管，具有高电压开关功能，适用于需要高电流增益的应用。

### 引脚分配 - SOT-89封装：B(基极), C(集电极), E(发射极) - TO-92封装：E(发射极), B(基极), C(集电极)

### 参数特性 - 集电极-发射极电压：$V_{CEO}=-150V$ - 集电极-基极电压：$VCBO=-160V$ - 发射极-基极电压：$VEBO=-5V$ - 集电极电流：$Ic=-600mA$ - 集电极耗散：TO-92为625mW，SOT-89为500mW - 结温：$TJ=+150°C$ - 存储温度：$TSTG=-55°C至+150°C$

### 功能详解 - DC电流增益：在不同的集电极电流下，$hFE$有三个范围，分别为80-170，150-240，200-400。 - 饱和电压：集电极-发射极饱和电压$VCE(SAT)$在不同的集电极电流下有不同的值，例如在$Ic=-10mA$时为-0.2V，在$Ic=-50mA$时为-0.5V。 - 电流增益-带宽积：在$f=100MHz$时，$fr$的范围是100至400MHz。

### 应用信息 2N5401适用于高电压开关应用，特别是在需要高电流增益和高电压耐受的场合。

### 封装信息 - SOT-89：表面贴装型封装 - TO-92：通孔型封装，适用于通过引脚焊接的传统电路

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