2N5401L-C-T92-R

UNISONIC TECHNOLOGIES CO., LTD 2N5401 HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * Collector-emitter voltage: VCEO = -150V * High current gain PNP SILICON TRANSISTOR 1 SOT-89 1 TO-92 *Pb-free plating product number:2N5401L ORDERING INFORMATION Order Number Normal Lead Free Plating 2N5401-x-AB3-R 2N5401L-x-AB3-R 2N5401-x-T92-B 2N5401L-x-T92-B 2N5401-x-T92-K 2N5401L-x-T92-K Package SOT-89 TO-92 TO-92 Pin Assignment 1 2 3 B C E E B C E B C Packing Tape Reel Tape Box Bulk 2N5401L-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) AB3: SOT-89, T92: TO-92 (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R201-001,D 2N5401 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25°C , unless otherwise specified) RATINGS UNIT -160 V -150 V -5 V -600 mA TO-92 625 mW Collector Dissipation PC SOT-89 500 mW ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO IC ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain(Note) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(SAT) VBE(SAT) fT Cob NF TEST CONDITIONS Ic = -100µA, IE = 0 Ic = -1mA, IB = 0 IE = -10µA, Ic = 0 VCB = -120V, IE = 0 VEB = -3V, Ic = 0 VCE = -5V, Ic = -1mA VCE = -5V, Ic = -10mA VCE = -5V, Ic = -50mA Ic = -10mA, IB = -1mA Ic = -50mA, IB = -5mA Ic = -10mA, IB = -1mA Ic = -50mA, IB = -5mA VCE = -10V, Ic = -10mA f = 100MHz VCB = -10V, IE = 0, f = 1MHz Ic = -0.25mA, VCE = -5V Rs = 1kΩ, f = 10Hz ~ 15.7kHz MIN -160 -150 -6 TYP MAX UNIT V V V nA nA -50 -50 80 80 80 400 -0.2 -0.5 -1 -1 100 400 6.0 8 V V MHz pF dB Note: Pulse test: PW