2N5551

UNISONIC TECHNOLOGIES CO., LTD 2N5551 HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High collector-emitter voltage: VCEO=160V * High current gain NPN SILICON TRANSISTOR 1 SOT-89 APPLICATIONS * Telephone switching circuit * Amplifier 1 TO-92 *Pb-free plating product number: 2N5551L ORDERING INFORMATION Order Number Normal Lead Free Plating 2N5551-x-AB3-R 2N5551L-x-AB3-R 2N5551-x-T92-B 2N5551L-x-T92-B 2N5551-x-T92-K 2N5551L-x-T92-K Package SOT-89 TO-92 TO-92 Pin Assignment 1 2 3 B C E E B C E B C Packing Tape Reel Tape Box Bulk 2N5551L-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) T92: TO-92, AB3: SOT-89 (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R201-002.B 2N5551 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Dissipation TO-92 625 mW PC Collector Dissipation SOT-89 500 mW Collector Current IC 600 mA Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=100µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 Emitter-Base Breakdown Voltage BVEBO IE=10µA, IC=0 Collector Cut-off Current ICBO VCB=120V, IE=0 Emitter Cut-off Current IEBO VBE=4V,IC=0 VCE=5V, IC=1mA hFE1 VCE=5V, IC=10mA DC Current Gain(Note) hFE2 VCE=5V, IC=50mA hFE3 IC=10mA, IB=1mA Collector-Emitter Saturation Voltage VCE(SAT) IC=50mA, IB=5mA IC=10mA, IB=1mA Base-Emitter Saturation Voltage VBE(SAT) IC=50mA, IB=5mA Current Gain Bandwidth Product fT VCE=10V, IC=10mA, f=100MHz Output Capacitance Cob VCB=10V, IE=0 f=1MHz IC=0.25mA, VCE=5V Noise Figure NF RS=1kΩ, f=10Hz ~ 15.7kHz Note: Pulse test: PW