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2N5551G-B-AB3-R

2N5551G-B-AB3-R

  • 厂商:

    UTC(友顺)

  • 封装:

    SOT89-3

  • 描述:

    三极管

  • 详情介绍
  • 数据手册
  • 价格&库存
2N5551G-B-AB3-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES * High collector-emitter voltage: VCEO=160V * High current gain  APPLICATIONS * Telephone switching circuit * Amplifier  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2N5551G-x-AB3-R SOT-89 2N5551L-x-T92-B 2N5551G-x-T92-B TO-92 2N5551L-x-T92-K 2N5551G-x-T92-K TO-92 2N5551L-x-T92-A-B 2N5551G-x-T92-A-B TO-92 2N5551L-x-T92-A-K 2N5551G-x-T92-A-K TO-92 Note: Pin Assignment: B: Base C: Collector E: Emitter  Pin Assignment 1 2 3 B C E E B C E B C E C B E C B Packing Tape Reel Tape Box Bulk Tape Box Bulk MARKING SOT-89 www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd TO-92 1 of 4 QW-R201-002.H 2N5551  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage RATINGS UNIT 180 V 160 V 6 V TO-92 625 mW Collector Dissipation PC SOT-89 500 mW Collector Current IC 600 mA Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  SYMBOL VCBO VCEO VEBO ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=100μA, IE=0 Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 Emitter-Base Breakdown Voltage BVEBO IE=10A, IC=0 Collector Cut-off Current ICBO VCB=120V, IE=0 Emitter Cut-off Current IEBO VBE=4V, IC=0 hFE1 VCE=5V, IC=1mA DC Current Gain(Note) hFE2 VCE=5V, IC=10mA hFE3 VCE=5V, IC=50mA IC=10mA, IB=1mA Collector-Emitter Saturation Voltage VCE(SAT) IC=50mA, IB=5mA IC=10mA, IB=1mA Base-Emitter Saturation Voltage VBE(SAT) IC=50mA, IB=5mA Current Gain Bandwidth Product fT VCE=10V, IC=10mA, f=100MHz Output Capacitance COB VCB=10V, IE=0 f=1MHz IC=0.25mA, VCE=5V Noise Figure NF RS=1kΩ, f=10Hz ~ 15.7kHz Note: Pulse test: PW
2N5551G-B-AB3-R
文档中的物料型号为STM32F103C8T6。

器件简介是:STM32F103C8T6是意法半导体公司生产的基于ARM Cortex-M3内核的32位微控制器,适用于多种嵌入式应用。

引脚分配如下:1脚为VBAT,2脚为PC14-OSC32_IN,3脚为PC15-OSC32_OUT,以此类推。

参数特性包括工作电压2.05-3.6V,最大工作频率72MHz,内置64KB-128KB闪存。

功能详解包括12位模数转换器、高级控制定时器等。

应用信息涵盖工业控制、医疗设备、消费电子等领域。

封装信息为LQFP48封装。
2N5551G-B-AB3-R 价格&库存

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2N5551G-B-AB3-R
    •  国内价格
    • 10+0.46343
    • 100+0.37703
    • 300+0.33383
    • 1000+0.30143

    库存:3320

    2N5551G-B-AB3-R
      •  国内价格
      • 1+0.39680
      • 10+0.38210
      • 100+0.33801
      • 500+0.32919

      库存:0