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2N5551L-B-T92-K

2N5551L-B-T92-K

  • 厂商:

    UTC(友顺)

  • 封装:

    TO92-3

  • 描述:

    晶体管类型:NPN;集射极击穿电压(Vceo):160V;集电极电流(Ic):600mA;功率(Pd):625mW;集电极截止电流(Icbo):50nA;集电极-发射极饱和电压(VCE(sat)@Ic...

  • 数据手册
  • 价格&库存
2N5551L-B-T92-K 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES * High collector-emitter voltage: VCEO=160V * High current gain  APPLICATIONS * Telephone switching circuit * Amplifier  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2N5551G-x-AB3-R SOT-89 2N5551L-x-T92-B 2N5551G-x-T92-B TO-92 2N5551L-x-T92-K 2N5551G-x-T92-K TO-92 2N5551L-x-T92-A-B 2N5551G-x-T92-A-B TO-92 2N5551L-x-T92-A-K 2N5551G-x-T92-A-K TO-92 Note: Pin Assignment: B: Base C: Collector E: Emitter  Pin Assignment 1 2 3 B C E E B C E B C E C B E C B Packing Tape Reel Tape Box Bulk Tape Box Bulk MARKING SOT-89 www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd TO-92 1 of 4 QW-R201-002.H 2N5551  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage RATINGS UNIT 180 V 160 V 6 V TO-92 625 mW Collector Dissipation PC SOT-89 500 mW Collector Current IC 600 mA Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  SYMBOL VCBO VCEO VEBO ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=100μA, IE=0 Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 Emitter-Base Breakdown Voltage BVEBO IE=10A, IC=0 Collector Cut-off Current ICBO VCB=120V, IE=0 Emitter Cut-off Current IEBO VBE=4V, IC=0 hFE1 VCE=5V, IC=1mA DC Current Gain(Note) hFE2 VCE=5V, IC=10mA hFE3 VCE=5V, IC=50mA IC=10mA, IB=1mA Collector-Emitter Saturation Voltage VCE(SAT) IC=50mA, IB=5mA IC=10mA, IB=1mA Base-Emitter Saturation Voltage VBE(SAT) IC=50mA, IB=5mA Current Gain Bandwidth Product fT VCE=10V, IC=10mA, f=100MHz Output Capacitance COB VCB=10V, IE=0 f=1MHz IC=0.25mA, VCE=5V Noise Figure NF RS=1kΩ, f=10Hz ~ 15.7kHz Note: Pulse test: PW
2N5551L-B-T92-K 价格&库存

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