2N60G-CB-AA3-R

UNISONIC TECHNOLOGIES CO., LTD 2N60-CB Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60-CB is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 4.6Ω @ VGS = 10V, ID = 1.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 7 QW-R209-071.D 2N60-CB  Power MOSFET ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2N60L-T60-T 2N60G-T60-T TO-126 2N60L-AA3-R 2N60G-AA3-R SOT-223 2N60L-TA3-T 2N60G-TA3-T TO-220 2N60L-TF3-T 2N60G-TF3-T TO-220F 2N60L-TF1-T 2N60G-TF1-T TO-220F1 2N60L-TF2-T 2N60G-TF2-T TO-220F2 2N60L-TF3T-T 2N60G-TF3T-T TO-220F3 2N60L-TM3-T 2N60G-TM3-T TO-251 2N60L-TMS-T 2N60G-TMS-T TO-251S 2N60L-TMS2-T 2N60G-TMS2-T TO-251S2 2N60L-TMS4-T 2N60G-TMS4-T TO-251S4 2N60L-TN3-R 2N60G-TN3-R TO-252 2N60L-TND-R 2N60G-TND-R TO-252D 2N60L-K08-5060-R 2N60G-K08-5060-R DFN5060-8 Note: Pin Assignment: G: Gate D: Drain S: Source 2N60G-T60-T (1)Packing Type (2)Package Type (3)Green Package  1 G G G G G G G G G G G G G S 2 D D D D D D D D D D D D D S Pin Assignment 3 4 5 6 7 S S S S S S S S S S S S S S G D D D 8 D Packing Bulk Tape Reel Tube Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel Tape Reel (1) T: Tube, R: Tape Reel (2) T60: TO-126, AA3: SOT-223, TA3: TO-220, TF3: TO-220F, TF1: TO-220F1, TF1: TO-220F2, TF3T: TO-220F3, TM3: TO-251, TMS: TO-251S, TMS2: TO-251S2, TMS4: TO-251S4, TN3: TO-252, TND: TO-252D, K08-5060: DFN5060-8 (3) G: Halogen Free and Lead Free, L: Lead Free MARKING PACKAGE MARKING TO-126 SOT-223 TO-220 / TO-220F TO-220F1 / TO-220F2 TO-220F3 / TO-251 TO-251S / TO-251S2 TO-251S4 / TO-252 TO-252D DFN5060-8 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R209-071.D 2N60-CB  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.0 A Continuous ID 2.0 A Drain Current 8.0 A Pulsed (Note 2) IDM Avalanche Energy Single Pulsed (Note 3) EAS 72 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 2.72 V/ns TO-126 40 W SOT-223 44 W TO-220 55 W TO-220F/TO-220F1 24 W TO-220F3 Power Dissipation PD TO-220F2 25 W TO-251/TO-251S TO-251S2/TO-251S4 44 W TO-252/TO-252D DFN5060-8 22 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=25mH, IAS=2.4A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER TO-126 SOT-223 TO-220/TO-220F TO-220F1/ TO-220F2 Junction to Ambient TO-220F3 TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D DFN5060-8 TO-126 SOT-223 TO-220 TO-220F/TO-220F1 TO-220F3 Junction to Case TO-220F2 TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D DFN5060-8 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATINGS 89 150 UNIT °C/W °C/W 62.5 °C/W 100 °C/W 75 3.12 14 2.27 °C/W °C/W °C/W °C/W 5.2 °C/W 5.0 °C/W 2.84 °C/W 5.68 °C/W θJA θJC 3 of 7 QW-R209-071.D 2N60-CB  Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS VGS = 0V, ID = 250μA 600 VDS = 600V, VGS = 0V Drain-Source Leakage Current IDSS VDS = 480V, TC =125°С Forward VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS =25V, VGS =0V, f =1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, VGS=10V, Gate-Source Charge QGS ID=1.3A, ID=100μA (Note 1, 2) Gate-Drain Charge QGD Turn-On Delay Time tD (ON) VDD=30V, VGS=10V, ID=0.5A, Turn-On Rise Time tR RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM Drain-Source Diode Forward Voltage VSD ISD=2.0 A, VGS=0 V Reverse Recovery Time trr IS=2.0A, VGS =0 V dIF/dt=100A/µs (Note1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.4 V 10 μA 100 μA 100 nA -100 nA V/°С 4.0 4.6 V Ω 300 36 5 pF pF pF 19 2.3 2.4 37 24 90 29 nC nC nC ns ns ns ns 2 8 1.4 315 0.75 A A V ns µC 4 of 7 QW-R209-071.D 2N60-CB  Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R209-071.D 2N60-CB  Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) itching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R209-071.D 2N60-CB  TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 300 Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) Drain Current, ID (µA) Power MOSFET 200 150 100 200 150 100 50 0 50 0 200 400 600 800 0 0 1000 0.5 1 1.5 2 2.5 3 3.5 4 Gate Threshold Voltage, VTH (V) Drain Current, ID (A) Continuous Drain-Source Current, ISD (A) Drain-Source Breakdown Voltage, BVDSS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R209-071.D