2N60L-TA3-T

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 5Ω@ VGS = 10V, ID =1A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness  SYMBOL www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-053.AA 2N60  Power MOSFET ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2N60L-TA3-T 2N60G-TA3-T TO-220 2N60L-TF1-T 2N60G-TF1-T TO-220F1 2N60L-TF2-T 2N60G-TF2-T TO-220F2 2N60L-TF3-T 2N60G-TF3-T TO-220F 2N60L-TF3T-T 2N60G-TF3T-T TO-220F3 2N60L-TM3-T 2N60G-TM3-T TO-251 2N60L-TMA-T 2N60G-TMA-T TO-251L 2N60L-TMS-T 2N60G-TMS-T TO-251S 2N60L-TMS2-T 2N60G-TMS2-T TO-251S2 2N60L-TMS4-T 2N60G-TMS4-T TO-251S4 2N60L-TN3-R 2N60G-TN3-R TO-252 2N60L-TND-R 2N60G-TND-R TO-252D 2N60L-T2Q-T 2N60G-T2Q-T TO-262 2N60L-T60-K 2N60G-T60-K TO-126 2N60L-T6C-K 2N60G-T6C-K TO-126C 2N60L-K08-5060-R 2N60G-K08-5060-R DFN5060-8 Note: Pin Assignment: G: Gate D: Drain S: Source  1 G G G G G G G G G G G G G G G S 2 D D D D D D D D D D D D D D D S Pin Assignment 3 4 5 6 7 S S S S S S S S S S S S S S S S G D D D 8 D Packing Tube Tube Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel Tube Bulk Bulk Tape Reel MARKING PACKAGE TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251L MARKING TO-251S TO-251S2 TO-251S4 TO-252 TO-252D TO-262 TO-126 TO-126C DFN5060-8 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-053.AA 2N60  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.0 A Continuous ID 2.0 A Drain Current 8.0 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 140 mJ Avalanche Energy 4.5 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/ TO-262 54 W TO-220F/TO-220F1 23 W TO-220F3 TO-220F2 24 W Power Dissipation TO-251/TO-251L PD (TC = 25°С) TO-251S/TO-251S2 44 W TO-251S4/TO-252 TO-252D TO-126/TO-126C 40 W 22 W DFN5060-8 Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER Junction to Ambient Junction to Case PACKAGE TO-220/TO-220F TO-220F1/TO-220F2 TO-220F3/TO-262 TO-251/TO-251L TO-251S/TO-251S2 TO-251S4/TO-252 TO-252D TO-126/TO-126C DFN5060-8 TO-220/ TO-262 TO-220F/TO-220F1 TO-220F3 TO-220F2 TO-251/TO-251L TO-251S/TO-251S2 TO-251S4/TO-252 TO-252D TO-126/TO-126C DFN5060-8 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA RATINGS UNIT 62.5 °С/W 100 °С/W 89 75 2.32 °С/W °С/W °С/W 5.5 °С/W 5.43 °С/W 2.87 °С/W 3.12 5.6 °С/W °С/W θJC 3 of 7 QW-R502-053.AA 2N60  Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS VGS = 0V, ID = 250μA 600 VDS = 600V, VGS = 0V Drain-Source Leakage Current IDSS VDS = 480V, TC = 125°С Forward VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID =1A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS =25V, VGS =0V, Output Capacitance COSS f =1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=480V, VGS=10V, Gate-Source Charge QGS ID=2.4A (Note 1, 2) Gate-Drain Charge QGD Turn-On Delay Time tD (ON) VDD =300V, ID =2.4A, Turn-On Rise Time tR RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF DRAIN-SOURCE DIODE CHARACTERISTICS Continuous Drain-Source Current IS Pulsed Drain-Source Current ISM Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A Reverse Recovery Time trr VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs (Note 1) Reverse Recovery Charge Qrr Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.4 V 10 μA 100 μA 100 nA -100 nA V/°С 3.6 4.0 5 V Ω 300 45 10 350 50 13 pF pF pF 40 4.2 8.4 40 35 90 50 50 nC nC nC ns ns ns ns 60 55 120 60 2.0 8.0 1.4 180 0.72 A A V ns μC 4 of 7 QW-R502-053.AA 2N60  Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-053.AA 2N60  Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R502-053.AA 2N60 TYPICAL CHARACTERISTICS Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA)  Power MOSFET 200 150 100 200 150 100 50 50 0 0 0 0.5 1 1.5 2 2.5 3 3.5 Gate Threshold Voltage, VTH (V) 4 Drain Current, ID (A) Continuous Drain-Source Current, ISD (A) 0 200 600 800 1000 400 Drain-Source Breakdown Voltage, BVDSS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-053.AA