UNISONIC TECHNOLOGIES CO., LTD 2N60L
2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
1 1
Power MOSFET
TO-220
TO-220F
1
TO-220F1
FEATURES
* RDS(ON) = 5Ω@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
1
TO-251L
1
SYMBOL
2.Drain
1
TO-251
TO-252 1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 2N60LL-x-TA3-T 2N60LG-x-TA3-T 2N60LL-x-TF1-T 2N60LG-x-TF1-T 2N60LL-x-TF3-T 2N60LG-x-TF3-T 2N60LL-x-TM3-T 2N60LG-x-TM3-T 2N60LL-x-TMA-T 2N60LG-x-TMA-T 2N60LL-x-TN3-R 2N60LG-x-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F TO-251 TO-251L TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel
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2N60L
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER SYMBOL 2N60L-A 2N60L-B
Power MOSFET
RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 2.0 A Continuous ID 2.0 A Drain Current 8.0 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 140 mJ Avalanche Energy Repetitive (Note 2) EAR 4.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 54 W PD Power Dissipation TO-220F/TO-220F1 23 W (TC = 25°С) TO-251/TO-251L/TO-252 44 W Junction Temperature TJ +150 °С Ambient Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PACKAGE TO-220 Junction to Ambient TO-220F/TO-220F1 TO-251/TO-251L/TO-252 TO-220 Junction to Case TO-220F/TO-220F1 TO-251/TO-251L/TO-252 PARAMETER SYMBOL θJA RATINGS 62.5 62.5 100 2.32 5.5 2.87 UNIT °С/W °С/W °С/W °С/W °С/W °С/W
θJc
ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)
PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse 2N60L-A 2N60L-B SYMBOL BVDSS IDSS TEST CONDITIONS VGS = 0V, ID = 250μA MIN TYP MAX UNIT 600 650 10 100 -100 0.4 2.0 3.8 270 40 5 4.0 5 350 50 7 V V μA nA nA V/°С V Ω pF pF pF
Breakdown Voltage Temperature Coefficient ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V IGSS VGS = -30V, VDS = 0V ID = 250 μA, Referenced to △BVDSS/△TJ 25°C VGS(TH) RDS(ON) CISS COSS CRSS VDS = VGS, ID = 250μA VGS = 10V, ID =1A
VDS =25V, VGS =0V,f =1MHz
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QW-R502-472,a
2N60L
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER SYMBOL TEST CONDITIONS SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) VDD =300V, ID =2.4A, RG=25Ω Turn-On Rise Time tR (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS=480V, VGS=10V, ID=2.4A Gate-Source Charge QGS (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, ISD = 2.0 A Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM VGS = 0 V, ISD = 2.4A, Reverse Recovery Time tRR di/dt = 100 A/μs (Note1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT 10 25 20 25 9.0 1.6 4.3 30 60 50 60 11 ns ns ns ns nC nC nC V A A ns μC
1.4 2.0 8.0 180 0.72
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TEST CIRCUITS AND WAVEFORMS
D.U.T. + VDS + L
Power MOSFET
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period
VGS= 10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv/dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
VDS
90%
VGS
10%
tD(ON) tR tD(OFF) tF
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
VGS QG
10V QGS
QGD
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
BVDSS IAS
ID(t) VDD
VDS(t)
tp
Time
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-472,a
2N60L
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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