2N6718-A-AB3-R

厂商：
UTC(友顺)
封装：
描述：
2N6718-A-AB3-R - NPN GENERAL PLANAR TRANSISTOR - Unisonic Technologies

数据手册：

下载2N6718-A-AB3-R.pdf

立即购买

详情介绍
数据手册
价格&库存

2N6718-A-AB3-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN GENERAL PLANAR TRANSISTOR DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications. NPN SILICON TRANSISTOR 1 SOT-89 1 TO-126C FEATURES * High Power: 850mW * High Current: 1A 1 TO-92 *Pb-free plating product number: 2N6718L ORDERING INFORMATION Order Number Normal Lead Free Plating 2N6718-x-AB3-R 2N6718-x-AB3-R 2N6718-x-T6C-K 2N6718-x-T6C-K 2N6718-x-T92-B 2N6718-x-T92-B 2N6718-x-T92-K 2N6718-x-T92-K Package SOT-89 TO-126C TO-92 TO-92 Pin Assignment 1 2 3 B C E E C B E C B E C B Packing Tape Reel Bulk Tape Box Bulk 2N6718L-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) AB3: SOT-89, T6C: TO-126C, T92: TO-92 (3) x: refer to Classification of hFE2 (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R201-056,B 2N6718 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Continue) Collector Current (Pulse) SYMBOL VCBO VCEO VEBO IC IC NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified) RATINGS UNIT 100 V 100 V 5 V 1 A 2 A SOT-89 0.5 W Total Power Dissipation PD TO-126C 1.6 W TO-92 850 mW ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (note) Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cut-Off Current DC Current Gain Current Gain - Bandwidth Product SYMBOL BVCBO BVCEO BVEBO VCE(SAT) ICBO hFE1 hFE2 hFE3 fT TEST CONDITIONS IC=100uA IC=1mA IE=10µA IC=350mA, IB=35mA VCB=80V VCE=1V, IC=50mA VCE=1V, IC=250mA VCE=1V, IC=500mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz MIN 100 100 5 TYP MAX UNIT V V V mV nA 350 100 80 50 20 50 20 300 MHz pF Output Capacitance Cob Note: Pulse test: PulseWidth≤380µs, Duty Cycle≤2% CLASSIFICATION OF hFE2 RANK RANGE A 50~115 B 95~300 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R201-056,B 2N6718 TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR Current Gain vs. Collector Current 1000 VCE=10V VCE=5V 100 VCE=2V VCE=1V Saturation Voltage (mV) 1000 Saturation Voltage vs. Collector Current Current Gain, h FE 100 10 VCE(SAT)@Ic=10IB 10 0.1 10 100 1000 10000 1 0.1 10 100 1000 10000 Collector Current, Ic (mA) Collector Current, Ic (mA) Saturation Voltage vs. Collector Current 10000 Saturation Voltage (mV) Capacitance (pF) Collector Output Capacitance 100 1000 VBE(SAT) @Ic=10IB 10 Cob 100 1 10 100 1000 10000 Collector Current, Ic (mA) Safe Operating Area 10 1ms 1 100ms 0.1 1s Cutoff Frequency (MHz) Collector Current, Ic(A) 1 0.1 1 10 100 Collector Base Voltage(V) Cutoff Frequency vs. Collector Current 1000 fT@VCE=10V 0.01 1 10 Forward Voltage, VCE(V) 100 100 1 10 Collector Current, Ic(mA) 100 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R201-056,B 2N6718 TYPICAL CHARACTERISTICS NPN SILICON TRANSISTOR Power Derating Power Dissipation, PD(mW) 2000 1500 1000 500 0 0 50 100 150 200 TO-126C TO-92 SOT-89 Ambient Temperature, Ta(℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-056,B

下载 PDF

2N6718-A-AB3-R

1. 物料型号： - 2N6718 - 无铅镀层产品型号：2N6718L

2. 器件简介： - 2N6718是设计用于中等功率放大和开关应用的NPN硅晶体管。

3. 引脚分配： - SOT-89封装：B(基极), C(集电极), E(发射极) - TO-126C封装：E(发射极), C(集电极), B(基极) - TO-92封装：E(发射极), C(集电极), B(基极)

4. 参数特性： - 最大集电极-基极电压：100V - 最大集电极-发射极电压：100V - 最大发射极-基极电压：5V - 集电极电流(连续)：1A - 集电极电流(脉冲)：2A - 总功率耗散(SOT-89)：0.5W - 总功率耗散(TO-126C)：1.6W - 总功率耗散(TO-92)：850mW - 结温：+150°C - 存储温度：-55~+150°C

5. 功能详解： - 该晶体管具有高功率(850mW)和高电流(1A)的特点，适用于中等功率放大和开关应用。

6. 应用信息： - 适用于中等功率放大和开关应用。

7. 封装信息： - SOT-89封装：2N6718-x-AB3-R - TO-126C封装：2N6718-x-T6C-K - TO-92封装：2N6718-x-T92-B, 2N6718-x-T92-K - 无铅镀层封装：2N6718L-x-AB3-R

2N6718-A-AB3-R 价格&库存

-> 查询更多价格&库存

很抱歉，暂时无法提供与“2N6718-A-AB3-R”相匹配的价格&库存，您可以联系我们找货

免费人工找货

搜索历史

2N6718-A-AB3-R

相关技术文章