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2N6718G-B-AB3-R

2N6718G-B-AB3-R

  • 厂商:

    UTC(友顺)

  • 封装:

    SOT89-3

  • 描述:

  • 数据手册
  • 价格&库存
2N6718G-B-AB3-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2N6718 NPN SILICON TRANSISTOR NPN GENERAL PLANAR TRANSISTOR  DESCRIPTION The UTC 2N6718 is designed for general purpose medium power amplifier and switching applications.  FEATURES * High Power: 850mW * High Current: 1A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2N6718L-x-AB3-R 2N6718G-x-AB3-R SOT-89 2N6718L-x-T6C-K 2N6718G-x-T6C-K TO-126C 2N6718L-x-T92-B 2N6718G-x-T92-B TO-92 2N6718L-x-T92-K 2N6718G-x-T92-K TO-92 Note: Pin Assignment: B: Base C: Collector E: Emitter  Pin Assignment 1 2 3 B C E E C B E C B E C B Packing Tape Reel Bulk Tape Box Bulk MARKING SOT-89 TO-126C TO-92 UTC 2N6718 1 www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd L: Lead Free G: Halogen Free Date Code 1 of 4 QW-R201-056.G 2N6718  NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Continue) Collector Current (Pulse) RATINGS UNIT 100 V 100 V 5 V 1 A 2 A SOT-89 1 (Note 2) W Total Power Dissipation TO-126C PD 1.6 W TO-92 850 mW Junction Temperature TJ +150 °C Operating Temperature TOPR -40 ~ +125 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.  SYMBOL VCBO VCEO VEBO IC IC THERMAL DATA PARAMETER SOT-89 TO-126C TO-92 SOT-89 TO-126C TO-92 Junction to Ambient Junction to Case  SYMBOL θJA θJC RATING 125 78 147 70 6.25 80 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=100uA Collector-Emitter Breakdown Voltage (note) BVCEO IC=1mA Emitter-Base Breakdown Voltage BVEBO IE=10A Collector-Emitter Saturation Voltage VCE(SAT) IC=350mA, IB=35mA Collector Cut-Off Current ICBO VCB=80V VCE=1V, IC=50mA hFE1 DC Current Gain hFE2 VCE=1V, IC=250mA hFE3 VCE=1V, IC=500mA Current Gain - Bandwidth Product fT VCE=10V, IC=50mA, f=100MHz Output Capacitance Cob VCB=10V, IE=0, f=1MHz Note: Pulse test: PulseWidth≤380s, Duty Cycle≤2%  UNIT °C/W °C/W °C/W °C/W °C/W °C/W MIN TYP MAX UNIT 100 V 100 V 5 V 350 mV 100 nA 80 50 300 20 50 MHz 20 pF CLASSIFICATION OF hFE2 RANK RANGE A 50~115 B 95~300 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R201-056.G 2N6718 Current Gain, hFE Saturation Voltage (mV) TYPICAL CHARACTERISTICS Saturation Voltage vs. Collector Current Collector Output Capacitance 100 Capacitance (pF) 10000 1000 VBE(SAT)@Ic=10IB 10 Cob 1 100 1 10 100 1000 10000 0.1 10 1 Collector Current, Ic (mA) Collector Base Voltage (V) Safe Operating Area Cutoff Frequency vs. Collector Current 10 100 1000 Cutoff Frequency (MHz) 1ms Collector Current, Ic(A) Saturation Voltage (mV)  NPN SILICON TRANSISTOR 1 100ms 0.1 0.01 1s 1 10 100 Forward Voltage, VCE(V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw fT@VCE=10V 100 1 10 100 Collector Current, Ic(mA) 3 of 4 QW-R201-056.G 2N6718 TYPICAL CHARACTERISTICS Power Derating Power Dissipation, PD(mW)  NPN SILICON TRANSISTOR 2000 1500 TO-126C TO-92 SOT-89 1000 500 0 0 50 100 150 200 Ambient Temperature, Ta(℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-056.G
2N6718G-B-AB3-R 价格&库存

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