2N7000

UTC 2N7000 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 2N7000 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications MOSFET 1 FEATURES *High density cell design for low RDS(ON) *Voltage controlled small signal switch *Rugged and reliable *High saturation current capability 1: SOURCE 2: GATE TO-92 3: DRAIN ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER Drain-Source Voltage Drain-Gate Voltage(RGS≤1MΩ) Gate -Source Voltage-Continuous -Non Repetitive (tp