2N7000Z

UNISONIC TECHNOLOGIES CO., LTD 2N7000Z 115m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7000Z has been designed to minimize on-state resistance to provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. The product is particularly suited for low voltage, low current applications, such as small servo motor control, power MOSFET gate drivers and other switching applications 1 Power MOSFET TO-92 FEATURES *High density cell design for low RDS(ON) *Voltage controlled small signal switch *Rugged and reliable *High saturation current capability SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 2N7000ZL-T92-B 2N7000ZG-T92-B TO-92 2N7000ZL-T92-K 2N7000ZG-T92-K TO-92 2N7000ZL-T92-R 2N7000ZG-T92-R TO-92 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 S G D S G D S G D Packing Tape Box Bulk Tape Reel www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd. 1 of 3 QW-R502-535.a 2N7000Z ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER Drain-Source Voltage Drain-Gate Voltage (RGS≤1MΩ) Continuous Gate -Source Voltage Non Repetitive (tp