2N7002G-AE2-R

UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES  * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signal Switch * Rugged and Reliable * High Saturation Current Capability SYMBOL   ORDERING INFORMATION Ordering Number Note:  2N7002G-AE2-R Pin Assignment: G: Gate D: Drain Package SOT-23-3 Pin Assignment 1 2 3 S G D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R203-037.M 2N7002  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.) PARAMETER Drain-Source Voltage Drain-Gate Voltage (RGS ≤1MΩ) Continuous Gate Source Voltage Non Repetitive(tP