2N80

UNISONIC TECHNOLOGIES CO., LTD 2N80 Preliminary Power MOSFET 2 Amps, 800 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 2N80 is universally applied in high efficiency switch mode power supply. FEATURES * 2.4A, 800V, RDS(on) = 6.3Ω @VGS = 10 V * High switching speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N80L-TF3-T 2N80G-TF3-T 2N80L-TN3-R 2N80G-TN3-R Note: Pin Assignment: G: Gate D: Drain Package TO-220F TO-252 S: Source 1 G G Pin Assignment 2 3 D S D S Packing Tube Tape Reel www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-480.a 2N80 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 2.4 A Continuous ID 2.4 A Drain Current 9.6 A Pulsed (Note 1) IDM Single Pulsed (Note 2) EAS 180 mJ Avalanche Energy Repetitive (Note 1) EAR 8.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.0 V/ns TO-220F 24 W Power Dissipation PD TO-252 43 W/°C Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note : Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case PACKAGE TO-220F TO-252 TO-220F TO-252 SYMBOL θJA θJC RATINGS 62.5 110 5.2 2.85 UNIT °C/W °C/W °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-480.a 2N80 PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) SYMBOL BVDSS TEST CONDITIONS ID=250µA, VGS=0V MIN TYP MAX 800 0.9 UNI T V V/°C 10 µA 100 +100 nA -100 nA 3.0 4.9 2.65 425 45 5.5 12 2.6 6.0 12 30 25 28 5.0 6.3 V Ω S pF pF pF nC nC nC ns ns ns ns A A V ns µC △BVDSS/△TJ Reference to 25°C, ID=250µA IDSS IGSS VDS=800V, VGS=0V VDS=640V, TC=125°C VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.2A Forward Transconductance (Note 4) gFS VDS=50V, ID=1.2A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge (Note 4,5) QG VGS=10V, VDS=640V, ID=2.4A Gate to Source Charge (Note 4,5) QGS Gate to Drain Charge (Note 4,5) QGD Turn-ON Delay Time (Note 4,5) tD(ON) Rise Time (Note 4,5) tR VDD=400V, ID=2.4A, RG=25Ω Turn-OFF Delay Time (Note 4,5) tD(OFF) Fall-Time (Note 4,5) tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD IS=2.4A, VGS=0V Reverse Recovery Time (Note 4) tRR IS=2.4A, VGS=0V, dIF/dt=100A/µs Reverse Recovery Charge (Note 4) QRR Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 59mH, IAS = 2.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 2.4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature 550 60 7.0 15 35 70 60 65 2.4 9.6 1.4 480 2.0 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-480.a 2N80 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT RG + VDS L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) IRM Body Diode Reverse Current VDS (DUT) di/dt Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-480.a 2N80 Gate Charge Test Circuit Preliminary Power MOSFET Gate Charge Waveforms VGS QG Same Type as DUT 12V 200nF 50kΩ VGS DUT 3mA 300nF VDS 10V QGS QGD Charge Unclamped Inductive Switching Test Circuit VDS RG ID Unclamped Inductive Switching Waveforms EAS= 1 LIAS2 2 BVDSS L IAS ID(t) BVDSS BVDSS-VDD 10V tP DUT VDD VDD VDS(t) Time tP UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-480.a 2N80 Preliminary Power MOSFET U TC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-480.a