2SA1012G-x-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 2SA1012 HIGH CURRENT SWITCHING APPLICATION . PNP SILICON TRANSISTOR FEATURES *Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At Ic=-3A *High Speed Switching Time: tS=1.0μs(Typ.) *Complementary To 2SC2562 ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free 2SA1012L-x-TA3-T 2SA1012G-x-TA3-T 2SA1012L-x-TF3-T 2SA1012G-x-TF3-T 2SA1012L-x-TM3-T 2SA1012G-x-TM3-T 2SA1012L-x-TN3-R 2SA1012G-x-TN3-R 2SA1012L-x-TN3-T 2SA1012G-x-TN3-T Package TO-220 TO-220F TO-251 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E B C E B C E B C E Packing Tube Tube Tube Tape Reel Tube www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 4 QW-R203-015,H 2SA1012 ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) PNP SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Collector-Emitter Voltage VEBO -5 V Peak Collector Current IC -5 A Power Dissipation PD 25 W ℃ Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition frequency Collector output capacitance Turn-on time Switching time Storage time Fall time SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (SAT) VBE (SAT) fT Cob tON tS tF TEST CONDITIONS IC=-100μA, IE=0 IC=-10mA, IB=0 IE=-100μA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-1A VCE=-1V, IC=-3A IC=-3A, IB=-0.15A IC=-3A, IB=-0.15A VCE=-4V, IC=-1A VCB=-10V, IE=0, f=1MHz MIN -60 -50 -5 TYP MAX UNIT V V V μA μA 70 30 -0.2 -0.9 60 170 0.1 1.0 0.1 -1.0 -1.0 360 -0.4 -1.2 V V MHz pF μs μs μs CLASSIFICATION of hFE1 RANK RANGE O 70 ~ 140 Y 120 ~ 240 R 180 ~ 360 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R203-015,H 2SA1012 ■ TYPICAL CHARACTERISTICS PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R203-015,H 2SA1012 TYPICAL CHARACTERICS (Cont.) PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R203-015,H