2SA1015L-GR-T92-B

UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  FEATURES * Collector-Emitter Voltage: BVCEO=-50V * Collector Current up to 150mA * High hFE Linearity * Complement to UTC 2SC1815  TO-92 ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free 2SA1015L-xx-T92-B 2SA1015G-xx-T92-B 2SA1015L-xx-T92-K 2SA1015G-xx-T92-K Note: Pin Assignment: E: Emitter C: Collector B: Base  1 Package TO-92 TO-92 Pin Assignment 1 2 3 E C B E C B Packing Tape Box Bulk MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., LTD 1of 4 QW-R201-004.D 2SA1015  PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation SYMBOL VCBO VCEO VEBO IC IB PC RATINGS -50 -50 -5 -150 -50 400 UNIT V V V mA mA mW Junction Temperature TJ 125 °C Storage Temperature TSTG -55 ~ +125 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) COB fT Noise Figure  NF TEST CONDITIONS IC=-100μA, IE=0 IC=-10mA, IB=0 IE=-10μA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA VCE=-6V, IC=-150mA IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCB=-10V, IE=0, f=1MHz VCE=-10V, Ic=-1mA VCE=-6V , IC=-0.1mA, RG=1kΩ, f=100Hz MIN -50 -50 -5 TYP MAX UNIT V V V -100 nA -100 nA 700 -0.1 4.0 -0.3 -1.1 7.0 V V pF MHz 0.5 6 dB 120 25 80 CLASSIFICATION OF hFE1 RANK RANGE Y 120-240 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw GR 200-400 BL 350-700 2of 4 QW-R201-004.D 2SA1015  PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS Static characteristics DC Current Gain -50 103 -40 VCE=-6V 102 IB=-300µA -30 IB=-250µA IB=-200µA -20 101 IB=-150µA -10 IB=-100µA IB=-50µA 0 -0 -8 -4 -12 -16 -20 100 -10-1 -100 Collector-Emitter Voltage, BVCEO (V) -101 -102 -103 Collector current, IC (mA) Base-Emitter on Voltage Saturation voltage -101 -102 IC=10xIB VCE=-6V -101 -100 -100 -10-1 -10-1 -10-2 0 -0.2 -0.4 -0.6 -0.8 VBE(SAT) VCE(SAT) -10-1 -1.0 Base-Emitter Voltage, BVBEO (V) -101 -102 -103 Collector Current, IC (mA) Current Gain-Bandwidth Product Collector Output Capacitance -102 f=1MHz -10-1 IE=0 3 10 VCE=-6V 102 -101 101 -100 100 -10-1 -100 -10-1 0 -10 1 -10 2 -10 Collector current, IC (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw -100 -101 -102 -103 Collector-Base Voltage, BVCBO (V) 3of 4 QW-R201-004.D 2SA1015 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4of 4 QW-R201-004.D