2SA1020G-Y-AB3-R

UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE(SAT)=-0.5V(MAX) (IC= -1A) *High speed switching time: tSTG=1.0μs(TYP) *Complement to UTC 2SC2655  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SA1020G-x-AE3-R 2SA1020G-x-AB3-R 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B 2SA1020L-x-T9N-K 2SA1020G-x-T9N-K Note: Pin Assignment: B: Base C: Collector E: Emitter  Package SOT-23 SOT-89 TO-92NL TO-92NL Pin Assignment 1 2 3 E B C B C E E C B E C B Packing Tape Reel Tape Reel Tape Box Bulk MARKING SOT-89 TO-92NL 1 SOT-23 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R211-007.G 2SA1020  PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current RATINGS UNIT -50 V -50 V -5 V -2 A SOT-23 300 mW Collector Power Dissipation SOT-89 PC 500 mW TO-92NL 900 mW Junction Temperature TJ 150 C Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  SYMBOL VCBO VCEO VEBO Ic ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER Collector to Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance SYMBOL BVCEO ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT COB TEST CONDITIONS IC=-10mA, IB=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-1.5A IC=-1A, IB=-0.05A IC=-1A, IB=-0.05A VCE=-2V, Ic=-0.5A VCB=-10V, IE=0, f=1MHz MIN TYP MAX -50 -1.0 -1.0 70 240 40 -0.5 -1.2 100 40 UNIT V μA μA V V MHz pF Turn-on Time tON 0.1 μs Switching Time Storage Time tSTG 1.0 μs tF 0.1 μs Fall Time  CLASSIFICATION OF hFE1 RANK RANGE O 70 - 140 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Y 120 - 240 2 of 4 QW-R211-007.G 2SA1020  PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R211-007.G 2SA1020  PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R211-007.G