UNISONIC TECHNOLOGIES CO., LTD 2SA1020
SILICON PNP EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC 2SA1020 is designed for power amplifier and power switching applications.
PNP SILICON TRANSISTOR
1
SOT-89
FEATURES
*Low collector saturation voltage: VCE(SAT)=-0.5V(max.) (IC=-1A) *High speed switching time: tSTG=1.0µs(Typ.) *Complement to UTC 2SC2655
1 TO-92NL
*Pb-free plating product number:2SA1020L
ORDERING INFORMATION
Order Number Normal Lead Free Plating 2SA1020-x-AB3-R 2SA1020L-x-AB3-R 2SA1020-x-T9N-B 2SA1020L-x-T9N-B 2SA1020-x-T9N-K 2SA1020L-x-T9N-K Package SOT-89 TO-92NL TO-92NL Pin Assignment 1 2 3 B C E E C B E C B Packing Tape Reel Tape Box Bulk
2SA1020L-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) AB3: SOT-89, T9N: TO-92NL (3) x: refer to Classification of hFE1 (4) L: Lead Free Plating, Blank: Pb/Sn
www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd
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2SA1020
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
RATINGS UNIT -50 V -50 V -5 V -2 A TO-92NL 900 mW Collector Power Dissipation PC SOT-89 500 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO Ic
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER Collector to Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn-on Time Storage Time Switching Time Fall Time SYMBOL BVCEO ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT Cob tON tSTG tF TEST CONDITIONS Ic=-10mA, IB=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-1.5A Ic=-1A, IB=-0.05A Ic=-1A, IB=-0.05A VCE=-2V, Ic=-0.5A VCB=-10V, IE=0, f=1MHz MIN -50 TYP MAX UNIT V -1.0 µA -1.0 µA 240 -0.5 -1.2 100 40 0.1 1.0 0.1 V V MHz pF µs µs µs
70 40
CLASSIFICATION OF hFE1
RANK RANGE O 70 - 140 Y 120 - 240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R211-007,B
2SA1020
TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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2SA1020
TYPICAL CHARACTERISTICS(Cont.)
PNP SILICON TRANSISTOR
TO-92NL
SOT-89
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R211-007,B
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