0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
2SA1627AL-K-T6C-K

2SA1627AL-K-T6C-K

  • 厂商:

    UTC(友顺)

  • 封装:

    TO126C

  • 描述:

    PNP 集射极击穿电压(Vceo):600V 集电极电流(Ic):1A 功率(Pd):1W K档 60-120 TO126C

  • 数据手册
  • 价格&库存
2SA1627AL-K-T6C-K 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2SA1627A PNP SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1627A is designed for general purpose amplifier and high speed switching applications.  FEATURES * High voltage * Low collector saturation voltage. * High-speed switching  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SA1627AG-x-AA3-R 2SA1627AL-x-TM3-T 2SA1627AG-x-TM3-T 2SA1627AL-x-TN3-R 2SA1627AG-x-TN3-R 2SA1627AL-x-T60-K 2SA1627AG-x-T60-K 2SA1627AL-x-T6C-K 2SA1627AG-x-T6C-K Note: Pin Assignment: E: Emitter C: Collector B: Base  Package SOT-223 TO-251 TO-252 TO-126 TO-126C Pin Assignment 1 2 3 B C E B C E B C E E C B E C B Packing Tape Reel Tube Tape Reel Bulk Bulk MARKING SOT-223 TO-251 / TO-252 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd TO-126 / TO-126C 1 of 4 QW-R217-004.G 2SA1627A  PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage RATINGS UNIT -600 V -600 V -7.0 V SOT-223 0.8 Collector Power Dissipation TO-251/TO-252 PC 1.9 W TO-126/TO-126C 1.0 Collector Current (DC) IC -1.0 A Collector Current (Pulse) (Note 2) ICP -2.0 A Junction Temperature TJ 150 C Storage Temperature TSTG -55 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. PW≦10ms, Duty Cycle≦50%  SYMBOL VCBO VCEO VEBO ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain (Note 2) Collector-Emitter Saturation Voltage(Note) Base-Emitter Saturation Voltage(Note) Gain Bandwidth Product Output Capacitance Turn-On Time Storage Time Fall Time Note: Pulsed PW≦350µs, Duty Cycle≦2%  SYMBOL ICBO IEBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT COB tON TSYG tF TEST CONDITIONS VCB= -600V, IE=0 VEB= -7.0V, IC=0 VCE= -5.0V, IC= -0.1A VCE= -5.0V, IC= -0.5A IC= -0.3A, IB= -0.06A IC= -0.3A, IB= -0.06A VCE= -10V, IE=0.1A VCB= -10V, IE=0, f=1.0MHz IC=-0.5A, RL=500Ω, IB1= -IB2= -0.1A, VCC =-250V MIN 30 4 10 TYP MAX UNIT -10 µA -10 µA 58 120 19 -0.28 -1.5 V -0.85 -1.2 V 28 MHz 42 50 pF 0.1 0.5 µs 3.5 5.0 µs 0.08 0.5 µs CLASSIFICATION OF hFE1 RANK RANGE M 30-60 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw L 40-80 K 60-120 2 of 4 QW-R217-004.G 2SA1627A TYPICAL CHARACTERISTICS 2.0 mA IB = -80 IB=1.8mA IB=1.6mA IB=1.4mA -60 IB=1.2mA IB=1.0mA -40 IB=0.8mA IB=0.6mA -20 IB=0.4mA 0 0 IB=0.2mA -2.0 -6.0 -10 -4.0 -8.0 Collector to Emitter Voltage, VCE (V) Collector Current vs. Base to Emitter Voltage -1.0 DC Current Gain vs. Collector Current 1000 300 DC Current Gain, hFE Collector Current vs. Collector to Emitter Voltage -100 Collector Current, IC (mA)  PNP SILICON TRANSISTOR 100 VCE=-5.0V 30 10 3 1 -0.002 -0.005 -0.02 -0.1 -0.2 -0.5 -1.0 -2.0 -0.01 -0.05 Collector Current, IC (A) -3.0 Collector and Base Saturation Voltage vs. Collector Current IC=5IB VCE=-5.0V -0.3 -1.0 VBE(SAT) -0.1 -0.3 -0.03 -0.1 -0.01 -0.003 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 Base to Emitter Voltage, VBE (V) -0.03 -0.005 -0.01 -0.02 -0.05 -0.1 -0.2 Collector Current, IC (A) Output Capacitance vs. Collector to Base Voltage 200 IE=0 -0.5 Collector Power Dissipation vs. Ambient Temperature 1.2 100 1.0 50 0.8 Free Air 0.6 20 10 0.4 5.0 2.0 -3.0 VCE(SAT) 0.2 0 -10 -30 -100 -300 Collector to Base Voltage, VCB (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 25 75 100 125 150 50 Ambient Temperature, TA ( ) 3 of 4 QW-R217-004.G 2SA1627A PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.)  Turn Off Time vs. Collector Current Switching Time, tSW (µs) 5.0 tSTG 2.0 1.0 0.5 0.2 0.1 -0.03 tF -0.1 -0.3 -1.0 Collector Current, IC (A) -3.0 100 Gain Bandwidth Product, fT (MHz) IC/IB=5 VCE=-250V IB1=IB2 50 Gain Bandwidth Product vs. Collector Current VCB=-5.0V 20 10 5.0 2.0 1.0 -0.002 -0.005 -0.01 -0.02 -0.05 -0.1 -0.2 Collector Current, IC (mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R217-004.G
2SA1627AL-K-T6C-K 价格&库存

很抱歉,暂时无法提供与“2SA1627AL-K-T6C-K”相匹配的价格&库存,您可以联系我们找货

免费人工找货
2SA1627AL-K-T6C-K
  •  国内价格
  • 5+0.92799
  • 20+0.84099
  • 100+0.75399
  • 500+0.66699
  • 1000+0.62639
  • 2000+0.59739

库存:0