2SA1700_2

UTC 2SA1700 HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. PNP EPITAXIAL SILICON TRANSISTOR 1 TO-252 1: BASE 2:COLLECTOR 3:EMITTER ABSOLUTE MAXIMUM RATINGS ( Ta=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (PULSE) Collector Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic Icp Pc Tj Tstg RATING -400 -400 -5 -200 -400 1 10( Tc=25°C) 150 -55 ~ +150 UNIT V V V mA mA W W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Reverse Transfer Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) Cob Cre TEST CONDITIONS IC= -10µA,IE=0 IC= -1mA, IB=0, RBE=∞ IE= -10µA,IC=0 VCB= -300V,IE=0 VEB= -4V,IC=0 VCE= -10V, Ic= -50mA IC= -50mA,IB= -5mA IC= -50mA,IB= -5mA VCB= -30V,f=1MHz VCB= -30V,f=1MHz MIN -400 -400 -5 TYP MAX UNIT V V V µA µA V V pF pF 60 -0.1 -0.1 200 -0.8 -1.0 5 4 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R209-009,A UTC 2SA1700 PARAMETER Gain-Bandwidth Product Turn-on Time Turn-off Time PNP EPITAXIAL SILICON TRANSISTOR SYMBOL fT ton toff TEST CONDITIONS VCE= -30V,IC= -10mA See test circuit See test circuit MIN TYP 70 0.25 5 MAX UNIT MHz µs µs CLASSIFICATION OF hFE RANK RANGE D 60-120 E 100-200 TEST CIRCUIT(Unit : (resistance : Ω, capacitance : F) IB1 INPUT RB IB2 VR PW=20 μs Duty Cycle≦1% OUTPUT RL + 470μ VCC= -150V 50 + 100μ VBE= 1V -10IB1= 10IB2=Ic= -50mA RL=3kΩ,RB=200Ω at Ic= -50mA ELECTRICAL CHARACTERISTICS CURVES -120 -100 Collector Current,Ic-mA -80 -60 -40 -20 0 0 TA=70℃ TA= -30℃ -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Base to Emitter Voltage,VBE-V IC-VBE VCE= -10V I(tot) mA 5 3 2 DC Current Gain,hFE 100 7 5 3 2 10 7 5 7-1.0 2 3 5 7 -10 2 3 5 7-100 2 3 Collector Current,Ic- mA TA=70℃ TA=25℃ TA= -30℃ VCE= -10V hFE-Ic TA=25℃ UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R209-009,A UTC 2SA1700 5 Collector to Emitter Saturation Voltage,VCE(sat)-V 3 2 -1.0 7 5 3 2 -0.1 7 5 7-1.0 T A=70 ℃ T A=-30 ℃ T A=25 ℃ VCE (sat)-Ic PNP EPITAXIAL SILICON TRANSISTOR Collector Current,Ic mA -10 Ic/I B=10 Base to Emitter Saturation Voltage,VBE(sat)-V 7 5 3 2 -1.0 7 5 3 2 T A=75 ℃ T A=25 ℃ T A=-30 ℃ V BE (sat)-Ic Ic/I B=10 2 3 5 7 -10 2 3 5 7-100 2 Collector Current,Ic- mA Switch Time -Ic 7-1.0 2 3 5 7 -10 2 3 5 7-100 2 3 Collector Current,Ic- mA ASO Icp Ic DC Switching Time,SW Time-μs Collector Current,Ic- mA 10 7 5 3 2 1.0 7 5 3 2 tstg tf -1000 5 3 2 -100 5 3 2 -10 5 3 2 -1.0 52 10ms 100ms 1ms DC Op (TC e =2 ratio 5℃ n ) (T A =2 5℃ ) Op era tio n ton VCC =-150V 0.1 10IB1=-10IB2=IC Ta=25 ℃ 7 5 -1.0 2 3 5 7 -10 2 3 5 7 -100 2 3 5 Collector Current,Ic- mA T C=25 ℃ 3 5 7 -10 2 3 5 7 -100 2 3 Collector to Emitter Voltage,V CE -V 5 12 Collector Dissipation,Pc -W 10 8 6 4 2 0 0 20 Pc -Ta No heat sink 40 60 80 100 120 140 160 Ambient Temperature, Ta -℃ UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R209-009,A UTC 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R209-009,A