2SA1797G-B-AB3-R

UNISONIC TECHNOLOGIES CO., LTD 2SA1797 PNP SILICON TRANSISTOR POWER TRANSISTOR  FEATURES * Low Saturation Voltage. VCE(SAT)=-0.35V(MAX) at IC / IB=-1A / -50mA * Excellent DC Current Gain Characteristics  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SA1797G-x-AA3-R 2SA1797G-x-AB3-R 2SA1797L-x-T9N-B 2SA1797G-x-T9N-B 2SA1797L-x-T9N-K 2SA1797G-x-T9N-K 2SA1797L-x-TN3-R 2SA1797G-x-TN3-R Note: Pin Assignment: B: Base C: Collector E: Emitter  Package SOT-223 SOT-89 TO-92NL TO-92NL TO-252 Pin Assignment 1 2 3 B C E B C E E C B E C B B C E Packing Tape Reel Tape Reel Tape Box Bulk Tape Reel MARKING SOT-89 2SA1797G SOT-223 Date Code 1 TO-252 www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd TO-92NL 1 of 4 QW-R208-029.I 2SA1797  PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation SYMBOL VCBO VCEO VEBO DC PULSE(Note 1) TO-92NL SOT-223 SOT-89 TO-252 IC PC RATINGS -50 -50 -6 -2 -5 1 0.8 0.5 1.9 150 -55 ~ +150 UNIT V V V A A W W W W C C Junction Temperature TJ Storage Temperature TSTG Note: 1. Single pulse, PW=10ms 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Transition Frequency Output Capacitance Note: Measured using pulse current.  SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT COB TEST CONDITIONS IC = -50A IC = -1mA IE = -50A VCB = -50V VEB = -5V IC/IB = -1A/-50mA (Note) VCE = -2V, IC=-0.5A (Note) VCE = -2V, IE=0.5A, f=100MHz VCB = -10V, IE=0A, f=1MHz MIN -50 -50 -6 120 TYP MAX UNIT V V V -0.1 A -0.1 A -0.15 -0.35 V 400 200 MHz 36 pF CLASSIFICATION OF hFE RANK RANGE A 120-240 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B 200-400 2 of 4 QW-R208-029.I 2SA1797 TYPICAL CHARACTERISTICS 800m 600m 400m С -40° -2m -1m 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Base to Emitter Voltage, VBE (V) 0 1 2 3 4 5 6 7 8 9 10 Collector to Emitter Voltage, VCE (V) Collector Saturation voltage, VCE(SAT) (V) 200m 0 TA = 7 mA A 6m 5mA 4mA 3mA 2mA 1mA 1.2 1 5°С 9mA 8mA VCE=2V TA =2 IB=10mA -10 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -5m =1 00 °С 1.6 1.4 TA=25°С Grounded Emitter Propagation Characteristics TA 1.8 Grounded Emitter Output Characteristics Collector Current, IC (mA) Collector Current, IC (A) 2.0 DC Current Gain, hFE  PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R208-029.I 2SA1797 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R208-029.I