2SA1797L-X-AA3-R

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UTC(友顺)
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2SA1797L-X-AA3-R - POWER TRANSISTOR - Unisonic Technologies

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2SA1797L-X-AA3-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD 2SA1797 POWER TRANSISTOR 1 PNP SILICON TRANSISTOR FEATURES * Low saturation voltage. VCE(SAT)=-0.35V(Max) at IC / IB=-1A / -50mA * Excellent DC current gain characteristics 1 SOT-223 SOT-89 1 TO-252 *Pb-free plating product number:2SA1797L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SA1797-x-AA3-R 2SA1797L-x-AA3-R 2SA1797-x-AB3-R 2SA1797L-x-AB3-R 2SA1797-x-TN3-R 2SA1797L-x-TN3-R 2SA1797-x-TN3-T 2SA1797L-x-TN3-T Package SOT-223 SOT-89 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E B C E B C E Packing Tape Reel Tape Reel Tape Reel Tube 2SA1797L-x-AA3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) R: Tape Reel, T: Tube (2) AA3: SOT-223, AB3: SOT-89, TN3: TO-252 (3) refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 2 QW-R208-029,B 2SA1797 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Power Dissipation SOT-223 SOT-89 TO-252 DC PULSE(Note 1) SYMBOL VCBO VCEO VEBO PC PNP SILICON TRANSISTOR Collector Current IC Junction Temperature TJ Storage Temperature TSTG Note: 1. Single pulse, PW =10ms 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. RATINGS -50 -50 -6 0.8 0.5 1.9 -2 -5 150 -55 ~ +150 UNIT V V V W W A A °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector-base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-emitter Saturation Voltage DC Current Gain Transition Frequency Output Capacitance Note: Measured using pulse current. SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT Cob TEST CONDITIONS IC = -50µA IC = -1mA IE = -50µA VCB = -50V VEB = -5V IC/IB = -1A/-50mA (Note) VCE = -2V, IC=-0.5A (Note) VCE = -2V, IE=0.5A, f=100MHz VCB = -10V, IE=0A, f=1MHz MIN -50 -50 -6 MAX UNIT V V V -0.1 µA -0.1 µA -0.15 -0.35 V 400 200 MHz 36 pF TYP 120 CLASSIFICATION OF hFE RANK RANGE A 120-240 B 200-400 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 2 QW-R208-029,B

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2SA1797L-X-AA3-R

### 物料型号 - 型号：2SA1797 - 铅免费电镀产品编号：2SA1797L

### 器件简介 2SA1797是一款PNP硅晶体管，具有低饱和电压（VCE(SAT)=-0.35V最大值在IC/IB=-1A/-50mA时）和优秀的直流电流增益特性。

### 引脚分配 - SOT-223：B, C, E - SOT-89：B, C, E - TO-252：B, C, E

### 参数特性 - 最大额定值： - 集电极-基极电压（VCBO）：-50V - 集电极-发射极电压（VCEO）：-50V - 发射极-基极电压（VEBO）：-6V - 集电极功耗（SOT-223）：0.8W - 集电极功耗（SOT-89）：0.5W - 集电极功耗（TO-252）：1.9W - 集电极电流（DC）：-2A - 脉冲电流：-5A - 结温（TJ）：150℃ - 存储温度（TSTG）：-55~+150℃

- 电气特性（Ta=25°C，除非另有说明）： - 集电极-基极击穿电压（BVCBO）：-50V - 集电极-发射极击穿电压（BVCEO）：-50V - 发射极-基极击穿电压（BVEBO）：-6V - 集电极截止电流（CBO）：-0.1A - 发射极截止电流（EBO）：-0.1A - 集电极-发射极饱和电压（VCE(SAT)）：-0.15V至-0.35V - 直流电流增益（hFE）：120至400 - 转换频率（fr）：200MHz - 输出电容（Cob）：36pF

### 功能详解 2SA1797以其低饱和电压和高直流电流增益特性，适用于需要高效率和高功率处理的应用，如音频放大器和开关电源。

### 应用信息 该晶体管适用于音频放大器、开关电源等应用，特别是在需要高效率和高功率处理的场合。

### 封装信息 - SOT-223 - SOT-89 - TO-252

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