2SA1943

UTC 2SA1943 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Complementary to UTC 2SC5200 * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. TO-3PL 1:BASE 2:COLLECTOR 3:EMITTER *Pb-free plating product number:2SA1943L ABSOLUTE MAXIMUM RATINGS (TC = 25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC TJ TSTG RATINGS -230 -230 -5 -15 -1.5 150 0 ~ +125 -65 ~ +125 UNIT V V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage SYMBOL TEST CONDITIONS ICBO VCB = -230V, IE=0 IEBO VEB= -5V, IC=0 V(BR) CEO IC= -50mA, IB=0 hFE (1) (Note) VCE= -5V, IC= -1A DC Current Gain VCE= -5V, IC= -7A hFE (2) Collector-Emitter Saturation Voltage VCE (sat) IC= -8A, IB= -0.8A Base -Emitter Voltage VBE VCE= -5V, IC= -7A Transition Frequency fT VCE= -5V, IC= -1A Collector Output Capacitance Cob VCB= -10V, IE=0, f=1MHz Note: hFE (1) Classification, R : 55 ~ 110, O : 80 ~ 160 MIN TYP MAX -5.0 -5.0 160 60 -1.5 -1.0 30 360 -3.0 -1.5 V V MHz pF UNIT μA μA V -230 55 35 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R214-006,A www.unisonic.com.tw UTC 2SA1943 TYPICAL CHARACTERISTICS IC - VCE -20 PNP EPITAXIAL SILICON TRANSISTOR IC - V BE -20 COLLECTOR CURRENT, I C (A) -16 -12 -800 -600 -400 -250 COLLECTOR CURRENT, I C (A) COMMON EMITTER T C =25℃ COMMON EMITTER VCE = -5V -16 -200 -100 -12 -150 -8 -8 IB = -10mA -4 -50 -40 -30 -20 -8 -10 -4 T C =100℃ 25 -25 -0.8 -1.2 -1.6 -2.0 0 0 -2 -4 -6 0 0 -0.4 COLLECTOR-EMITTER VOLTAGE, V CE (V) BASE-EMITTER VOLTAGE, V BE (V) VCE(sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat) (V) -3 hFE - I C DC CURRENT GAIN, h FE -1 300 100 TC =100℃ -0.3 TC =100℃ -0.1 -25 25 COMMON EMITTER IC / IB = 10 30 10 0 -0.01 25 -25 COMMON EMITTER VCE = -5V -0.1 -1 -10 -100 -0.01 -0.1 -1 -10 -100 COLLECTOR CURRENT, IC (A) COLLECTOR CURRENT, I C (A) SAFE OPERATING AREA -50 -30 IC MAX. (PULSED)※ IC MAX. (CONTINUOUS) 1ms※ 10ms※ 100ms※ -10 COLLECTOR CURRENT, I C (A) -5 -3 DC OPERATION TC =100℃ -1 -0.5 -0.3 ※ SINGLE NONREPETITIVE PULSE TC = 25℃ -0.1 CURVES MUST BE DERATED LINEARLY -0.05 WITH INCREASE IN TEMPERATURE. -0.03 -3 -10 -30 -100 VCEO MAX. -300 -1000 COLLECTOR-EMITTER VOLTAGE, VCE (V) UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R214-006,A www.unisonic.com.tw UTC 2SA1943 TRANSIENT THERMAL RESISTANCE , rth ( ℃/W) 10 PNP EPITAXIAL SILICON TRANSISTOR rth - t w CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. (SINGLE NONREPETITIVE PULSE) INFINTE HEAT SINK 1 0.1 0.01 0.001 0.01 0.1 1 PULSE WIDTH, t w (s) 10 100 1000 U T C assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all U T C products described or contained herein. U T C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably ex pected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R214-006,A www.unisonic.com.tw