2SA1943L-X-T3L-T

UNISONIC TECHNOLOGIES CO., LTD 2SA1943 POWER AMPLIFIER APPLICATIONS FEATURES * Complementary to UTC 2SC5200 * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage 1 PNP SILICON TRANSISTOR TO-3PL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SA1943L-x-T3L-T 2SA1943G-x-T3L-T Package TO-3PL Pin Assignment 1 2 3 B C E Packing Tube 2SA1943L-x-T3L-T (1)Packing Type (2)Package Type (3)Rank (4)Lead Free (1) T: Tube (2) T3L: TO-3PL (3) x: refer to Classification of hFE (4) L: Lead Free , G: Halogen Free www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 4 QW-R214-006,C 2SA1943 ABSOLUTE MAXIMUM RATING (TC = 25℃) PNP SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -230 V Collector-Emitter Voltage VCEO -230 V Emitter-Base Voltage VEBO -5 V Collector Current IC -15 A Base Current IB -1.5 A Collector Power Dissipation (Tc=25℃) PC 150 W Junction Temperature TJ +150 ℃ Storage Temperature Range TSTG -65 ~ +125 ℃ Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range and assured by design from –20℃~85℃ ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base -Emitter Voltage Transition Frequency Collector Output Capacitance SYMBOL ICBO IEBO V(BR) CEO hFE hFE VCE (SAT) VBE fT Cob TEST CONDITIONS VCB = -230V, IE=0 VEB= -5V, IC=0 IC= -50mA, IB=0 VCE= -5V, IC= -1A VCE= -5V, IC= -7A IC= -8A, IB= -0.8A VCE= -5V, IC= -7A VCE= -5V, IC= -1A VCB= -10V, IE=0, f=1MHz MIN TYP MAX -5.0 -5.0 160 60 -1.5 -1.0 30 360 -3.0 -1.5 V V MHz pF UNIT μA μA V -230 55 35 CLASSIFICATION OF hFE Rank Range R 55 ~ 110 O 80 ~ 160 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R214-006,C 2SA1943 TYPICAL CHARACTERISTICS PNP SILICON TRANSISTOR Collector Current, IC (A) Collector-Emitter Saturation Voltage, VCE(sat) (V) DC Current Gain, hFE Collector Current, IC (A) -50 -30 Collector Current, IC (A) -10 -5 -3 -1 -0.5 -0.3 Transient Thermal Resistance, rth ( C/W) Safe Operating Area IC MAX. (PULSED) IC MAX. (CONTINUOUS) 1ms 10 Transient Thermal Resistance vs. Pulse Width CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. (SINGLE NONREPETITIVE PULSE) 10ms 100ms DC OPERATION TC =100 C 1 INFINTE HEAT SINK 0.1 -0.1 VCEO MAX. -0.05 -0.03 -3 -10 -30 -100 -300 -1000 Collector-Emitter Voltage, VCE (V) **SINGLE NONREPETITIVE PULSE TC = 25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 0.01 1 10 100 1000 0.001 0.01 0.1 Pulse Width, tw (s) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R214-006,C 2SA1943 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R214-006,C