2SA684G-x-T9N-B

UNISONIC TECHNOLOGIES CO., LTD 2SA684 PNP SILICON TRANSISTOR DESCRIPTION The UTC 2SA684 is power amplifier and driver. PNP SILICON TRANSISTOR FEATURES * Automatic insertion by radial taping possible. * Complementary pair with 2SC1384 Lead-free: 2SA684L Halogen-free: 2SA684G ORDERING INFORMATION Normal 2SA684-x-AB3-R 2SA684-x-T9N-B 2SA684-x-T9N-K Ordering Number Lead Free Halogen Free 2SA684L-x-AB3-R 2SA684G-x-AB3-R 2SA684L-x-T9N-B 2SA684G-x-T9N-B 2SA684L-x-T9N-K 2SA684G-x-T9N-K Package SOT-89 TO-92NL TO-92NL Pin Assignment 1 2 3 B C E E C B E C B Packing Tape Reel Tape Box Bulk www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 5 QW-R211-006.C 2SA684 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Collector Current Collector Current (DC) SYMBOL VCBO VCEO VEBO ICP IC PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25℃ ,unless otherwise specified ) RATINGS -60 -50 -5 -1.5 -1 SOT-89 500 Collector Dissipation PC TO-92NL 1000 Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. UNIT V V V A A mW mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT Cob TEST CONDITIONS IC=-10μA, IE=0 IC=-2mA, IB=0 IE=-10μA, IC =0 VCB=-20V, IE=0 VCE=-10V, IC=-500mA VCE=-5V, IC=-1A IC=-0.5A, IB=-50mA IC=-0.5A, IB=-50mA VCE=-10V, IB=50mA, f=200MHz VCB=-10V, IE=0, f=1MHz MIN -60 -50 -5 85 50 -0.2 -0.85 200 20 TYP MAX UNIT V V V μA -0.1 340 -0.4 -1.2 30 V V MHz pF CLASSIFICATION OF hFE1 RANK RANGE Q 85-170 R 120-240 S 170-340 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R211-006.C 2SA684 TYPICAL CHARACTERISTICS PNP SILICON TRANSISTOR Base to Emitter Saturation Voltage, VBE(SAT) (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Forward Current Transfer Ratio, hFE 3 of 5 QW-R211-006.C 2SA684 TYPICAL CHARACTERISTICS(Cont.) PNP SILICON TRANSISTOR -120 -100 -80 -60 -40 Collector to Emitter Voltage vs. Base to Emitter Resistance IC=-10mA Ta=25℃ 104 Collector to Emitter Current vs. Ambient Temperature VCE=-10V 103 102 10 -20 0 1 3 10 30 0.1 0.3 100 Base to Emitter Resistance, RBE (KΩ) 1 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta (℃) Area Of Safe Operation (ASO) -10 -3 ICP -1 -0.3 -0.1 -0.03 -0.01 -0.003 -0.001 -0.1 -0.3 -1 -3 -10 -30 -100 Collector To Emitter Voltage, VCE (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R211-006.C Single Pulse Ta=25℃ t=10ms t=1s 2SA684 PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R211-006.C