UNISONIC TECHNOLOGIES CO., LTD 2SA684
PNP SILICON TRANSISTOR
DESCRIPTION
The UTC 2SA684 is power amplifier and driver.
PNP SILICON TRANSISTOR
FEATURES
* Automatic insertion by radial taping possible. * Complementary pair with 2SC1384
Lead-free: 2SA684L Halogen-free: 2SA684G
ORDERING INFORMATION
Normal 2SA684-x-AB3-R 2SA684-x-T9N-B 2SA684-x-T9N-K Ordering Number Lead Free Halogen Free 2SA684L-x-AB3-R 2SA684G-x-AB3-R 2SA684L-x-T9N-B 2SA684G-x-T9N-B 2SA684L-x-T9N-K 2SA684G-x-T9N-K Package SOT-89 TO-92NL TO-92NL Pin Assignment 1 2 3 B C E E C B E C B Packing Tape Reel Tape Box Bulk
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QW-R211-006.C
2SA684
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Collector Current Collector Current (DC) SYMBOL VCBO VCEO VEBO ICP IC
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS ( Ta=25℃ ,unless otherwise specified )
RATINGS -60 -50 -5 -1.5 -1 SOT-89 500 Collector Dissipation PC TO-92NL 1000 Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. UNIT V V V A A mW mW ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance SYMBOL BVCBO BVCEO BVEBO ICBO hFE1 hFE2 VCE(SAT) VBE(SAT) fT Cob TEST CONDITIONS IC=-10μA, IE=0 IC=-2mA, IB=0 IE=-10μA, IC =0 VCB=-20V, IE=0 VCE=-10V, IC=-500mA VCE=-5V, IC=-1A IC=-0.5A, IB=-50mA IC=-0.5A, IB=-50mA VCE=-10V, IB=50mA, f=200MHz VCB=-10V, IE=0, f=1MHz MIN -60 -50 -5 85 50 -0.2 -0.85 200 20 TYP MAX UNIT V V V μA
-0.1 340 -0.4 -1.2 30
V V MHz pF
CLASSIFICATION OF hFE1
RANK RANGE Q 85-170 R 120-240 S 170-340
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R211-006.C
2SA684
TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
Base to Emitter Saturation Voltage, VBE(SAT) (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Forward Current Transfer Ratio, hFE
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2SA684
TYPICAL CHARACTERISTICS(Cont.)
PNP SILICON TRANSISTOR
-120 -100 -80 -60 -40
Collector to Emitter Voltage vs. Base to Emitter Resistance IC=-10mA Ta=25℃
104
Collector to Emitter Current vs. Ambient Temperature VCE=-10V
103
102
10 -20 0 1 3 10 30 0.1 0.3 100 Base to Emitter Resistance, RBE (KΩ) 1 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta (℃)
Area Of Safe Operation (ASO) -10 -3 ICP -1 -0.3 -0.1 -0.03 -0.01 -0.003 -0.001 -0.1 -0.3 -1 -3 -10 -30 -100 Collector To Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
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QW-R211-006.C
Single Pulse Ta=25℃ t=10ms t=1s
2SA684
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R211-006.C
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