UTC 2SB1116/A
PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL SILICON TRANSISTOR
DESCRIPTION
* Complement to 2SD1616/A
APPLICATIONS
* Audio Frequency Power Amplifier * Medium Speed Switching
1
TO-92
1: Emitter
2: Collector
3: Base
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
Collector-Base Voltage 2SB1116 2SB1116A Collector-Emitter Voltage 2SB1116 2SB1116A Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)* Collector Power Dissipation Junction Temperature Storage Temperature *PW≦10ms,Duty Cycle≦50% VCEO VEBO Ic Icp Pc Tj Tstg -50 -60 -6 -1 -2 0.75 150 -55 ~ +150 V V A A W °C °C VCBO -60 -80 V
SYMBOL
RATINGS
UNIT
ELECTRICAL CHARACTERISTICS (Ta=25°C)
PARAMETER
Collector Cut-off Current Emitter Cut-off current DC Current Gain* 2SB1116 2SB1116A
SYMBOL
ICBO IEBO hFE1
TEST CONDITIONS
VCB=-60V,IE=0 VEB=-6V,Ic=0 VCE=-2V,Ic=-100mA VCE=-2V,Ic=-1A VCE=-2V,Ic=-50mA Ic=-1A,IB=-50mA Ic=-1A,IB=-50mA VCB=-10V,IE=0,f=1MHz VCE=-2V,Ic=-100mA Vcc=-10V,Ic=-100mA IB1=-IB2=-10mA VBE(off)=2 ~ 3V
MIN
TYP
MAX
-100 -100
UNIT
nA nA
hFE2 Base-Emitter On Voltage* VBE(on) Collector-Emitter Saturation Voltage* VCE(sat) Base-Emitter Saturation Voltage* VBE(sat) Output Capacitance Cob Current Gain Bandwidth Product fT Turn On Time tON Storage Time tSTG Fall Time tF *Pulse Test: PW≦350µs, Duty Cycle≦2%
135 135 81 -600
600 400 -650 -0.2 -0.9 25 120 0.07 0.7 0.07 -700 -0.3 -1.2 mV V V pF MHz μs μs μs
70
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R201-066,A
UTC 2SB1116/A
CLASSIFICATION of hFE1
RANK
hFE1
PNP EPITAXIAL SILICON TRANSISTOR
Y
135 ~ 270
G
200 ~ 400
L
300 ～ 600
TYPICAL CHARACTERISTICS
Static Characteristic -100
IB=-250 μA IB=-200μA
Static Characteristic -1.0
IB=-5.0mA IB=-4.5mA
IB=-3.5mA
IB=-4.0mA
Collector Current, Ic (mA)
-80 Collector Current, Ic (A)
IB=-150μA
-0.8 -0.6 -0.4 -0.2 0.0 0.0
IB=-3.0mA IB=-2.5mA
IB=-2.0m A
-60
IB=-100μA
IB=-1.5mA IB=-1.0mA IB=-0.5mA
-40
IB=-50μA
-20 0
0
-2
-4
-6
-8
-10
-0.2
-0.4
-0.6
-0.8
-1.0
Collector-Emitter Voltage, VCE (V)
Collector-Emitter Voltage, VCE (V)
DC Current Gain 1000 VCE=-2V -10
Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Ic=20IB
DC Current Gain, hFE
Saturation Voltage, VBE(sat), VCE(sat) (V)
100
-1
VBE(sat)
10
-0.1 VCE(sat)
1 -0.01
-0.1
-1
-10
-0.01 -0.01
-0.1
-1
-10
Collector Current, Ic (mA)
Collector Current, Ic (A)
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R201-066,A
UTC 2SB1116/A
Switching Time 10
PNP EPITAXIAL SILICON TRANSISTOR
Collector Output Capacitance 1000 IE=0 f=1MHz Vcc=-10V Ic=10IB1=-10IB2
Time, tON, tSTG, tF (μs)
1
Capacitance, Cob (pF)
tSTG
100
0.1
tF tON
10
0.01 -0.001
-0.01
-0.1
1 -1 -1 -10 -100 Collector-Base Voltage, VCB (V)
Collector Current, Ic (A)
Current Gain Bandwidth Product Current Gain-Bandwidth Product, T (MHz) f 1000 -10 VCE=-2V Collector Current, Ic (A)
Safe Operating Area
10 m
s PW =1 m s
100
-1
200ms
1 -0.01
-0.1
-1
-10
-0.01 -1
-10 Collector-Emitter Voltage, VCE (V)
2SB1116A
10
-0.1
2SB1116
DC
-100
Collector Current, Ic (mA) Power Derating 0.8 0.7 Power Dissipation, Pc (W) 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 175
Ambient Temperature, Ta (℃)
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R201-066,A
UTC 2SB1116/A
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R201-066,A
