2SB1116L-X-T92-K

UNISONIC TECHNOLOGIES CO., LTD 2SB1116/A PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION Complement to UTC 2SD1616/A PNP SILICON TRANSISTOR ORDERING INFORMATION Ordering Number Normal Lead Free Halogen Free 2SB1116-x-T92-B 2SB1116L-x-T92-B 2SB1116G-x-T92-B 2SB1116-x-T92-K 2SB1116L-x-T92-K 2SB1116G-x-T92-K 2SB1116A-x-T92-B 2SB1116AL-x-T92-B 2SB1116AG-x-T92-B 2SB1116A-x-T92-K 2SB1116AL-x-T92-K 2SB1116AG-x-T92-K Package TO-92 TO-92 TO-92 TO-92 Pin Assignment 1 2 3 E C B E C B E C B E C B Packing Tape Box Bulk Tape Box Bulk www.unisonic.com.tw 1 of 4 QW-R201-066.B Copyright © 2008 Unisonic Technologies Co., LTD 2SB1116/A PARAMETER SYMBOL 2SB1116 2SB1116A 2SB1116 2SB1116A PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25℃,unless otherwise specified ) RATINGS UNIT -60 Collector to Base Voltage VCBO V -80 -50 Collector to Emitter Voltage VCEO V -60 Emitter to Base Voltage VEBO -6 V DC IC -1 A Collector Current Pulse(Note2) ICM -2 A Total Power Dissipation PC 0.75 mW Junction Temperature TJ +150 °C Operating Temperature TOPR -20 ~ +85 ℃ Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width≦10ms, Duty cycle≦50% ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS Collector-Emitter Saturation Voltage(Note) VCE(SAT) IC=-1A, IB=-50mA Base-Emitter Saturation Voltage(Note) VBE(SAT) IC=-1A, IB=-50mA Base Emitter On Voltage(Note) VBE(ON) VCE=-2V, IC=-50mA Collector Cut-Off Current ICBO VCB=-60V, IE=0 Emitter Cut-Off Current IEBO VEB=-6V, IC=0 VCE=-2V, 2SB1116 hFE1 IC=-100mA DC Current Gain(Note) 2SB1116A hFE2 VCE=-2V, IC=-1A Transition Frequency fT VCE=-2V, IC=-100mA Output Capacitance Cob VCB=-10V, IE=0, f=1MHz VCC=-10V, IC=-100mA Turn On Time tON IB1=-IB2=-10mA, VBE(OFF)=2 ~ 3V Storage Time tSTG Fall Time tF Note: Pulse Test: Pulse width≦350μs, Duty cycle≦2% MIN TYP -0.2 -0.9 -650 MAX -1.2 -700 -100 -100 600 400 UNIT V V mV nA nA -600 135 135 81 70 120 25 0.07 0.7 0.07 MHz pF μs μs μs CLASSIFICATION OF hFE1 RANK hFE1 Y 135 ~ 270 G 200 ~ 400 L 300 ～ 600 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R201-066.B 2SB1116/A TYPICAL CHARACTERISTICS Static Characteristic IB=-250μA IB=-200μA Collector Current, Ic (A) IB=-150μA IB=-100μA IB=-50μA PNP SILICON TRANSISTOR -100 Collector Current, Ic (mA) -80 -60 -40 -20 0 -1.0 -0.8 -0.6 -0.4 -0.2 Static Characteristic IB=-5.0mA IB=-4.5mA IB=-4.0mA IB=-3.5mA IB=-3.0mA IB=-2.5mA IB=-2.0mA IB=-1.5mA IB=-1.0mA IB=-0.5mA 0 -4 -8 -10 -2 -6 Collector-Emitter Voltage, VCE (V) 0.0 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 Collector-Emitter Voltage, VCE (V) 1000 DC Current Gain, hFE Saturation Voltage, VBE(sat), VCE(sat) (V) DC Current Gain VCE=-2V -10 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC=20IB 100 -1 VBE(sat) 10 -0.1 VCE(sat) -0.1 -1 Collector Current, IC (A) -10 1 -0.01 -0.1 -1 Collector Current, Ic (mA) -10 -0.01 -0.01 Time, tON, tSTG, tF (μs) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Capacitance, Cob (pF) 3 of 4 QW-R201-066.B 2SB1116/A TYPICAL CHARACTERISTICS(Cont.) Current Gain Bandwidth Product VCE=-2V -10 PNP SILICON TRANSISTOR 1000 Safe Operating Area 10 m s PW =1 m 100 -1 200ms s 10 -0.1 DC 1 -0.01 -0.1 -10 -1 Collector Current, IC (mA) -0.01 -1 -10 -100 Collector-Emitter Voltage, VCE (V) 0.8 Power Dissipation, PC (W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 25 Power Derating 50 75 100 125 150 175 Ambient Temperature, Ta ( ℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-066.B