2SB1132-P-AB3-T

UNISONIC TECHNOLOGIES CO., LTD 2SB1132 MEDIUM POWER TRANSISTOR 1 PNP SILICON TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) 1 TO-252 *Pb-free plating product number: 2SB1132L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB1132-x-AB3-R 2SB1132L-x-AB3-R 2SB1132-x-TN3-R 2SB1132L-x-TN3-R 2SB1132-x-TN3-T 2SB1132L-x-TN3-T Package SOT-89 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E B C E Packing Tape Reel Tape Reel Tube 2SB1132L-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) R: Tape Reel, T: Tube (2) AB3: SOT-89, TN3: TO-252 (3) x: refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R208-016,B 2SB1132 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Single pulse, Pw=100ms) SYMBOL VCBO VCEO VEBO PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) RATINGS UNIT -40 V -32 V -5 V DC -1 A IC PULSE -2 A SOT-89 0.5 W Collector Power Dissipation PC TO-252 1 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Note: Measured using pulse current. SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT Cob TEST CONDITIONS IC = -50µA IC = -1mA IE= -50µA VCB= -20V VEB= -4V IC = -500mA,IB= -50mA (Note) VCE= -3V,IC = -0.1A (Note) VCE= -5V, IE= 50 mA, f=30MHz VCB= -10V, IE= 0A,f=1MHz MIN -40 -32 -5 TYP MAX UNIT V V V µA µA V MHz pF -0.2 82 150 20 -0.5 -0.5 -0.5 390 30 CLASSIFICATION OF hFE RANK RANGE P 82-180 Q 120-270 R 180-390 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R208-016,B 2SB1132 TYPICAL CHARACTERISTICS Grounded Emitter Propagation Characteristics -500 VCE =-6V Collector Current, Ic(mA) -200 -100 -50 -20 -10 -5 -2 -1 0 Ta=100℃ Ta=25℃ Ta= -55℃ Collector Current, Ic(mA) -400 -300 -500 -3.0 -3.5 PNP SILICON TRANSISTOR Grounded Emitter Output Characteristics -4.0 -2.5 -4.5 -5.0 -2.0 -1.5 -1.0 -200 -0.5 Ta=25℃ IB =0mA -0.4 -0.8 -1.2 -1.6 -2.0 Collector to Emitter Voltage, V CE(V) -100 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 Base to Emitter Voltage, VBE (V) DC Current Gain vs. Collector Current ( Ⅰ) Ta=25℃ 1000 DC Current Gain, hFE DC Current Gain, hFE 500 VcE= -3V 200 VcE= -1V 100 50 -1 DC Current Gain vs.Collector Current (Ⅱ) VcE= -3V 1000 500 Ta=100℃ 200 Ta=25℃ 100 Ta= -55℃ 50 -1 -2 -5 -10 -20 -50-100-200-500-1000 Collector Current, Ic(mA) -2 -5 -10 -20 -50-100-200-500-1000 Collector Current :Ic(mA) Collector-emitter Saturation Voltage vs. Collector Current Collector Saturation Voltage, VCE(SAT) ( V) Collector to Emitter Voltage, VCE(V) Ta=25℃ -0.5 IC/IB=10 -0.2 -0.1 -1 -1.0 Collector Emitter Saturation Voltage vs. Base Current Ta=25℃ -0.8 -0.6 -0.05 -0.4 IC = -500mA -0.02 -0.01 -1 -2 -0.2 IC = -300mA 0 -1 -2 -5 -10 -20 Base Current, IB(mA) -50 -100 -5 -10-20 -50-100-200-500-1000-2000 Collector Current, Ic(mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R208-016,B 2SB1132 TYPICAL CHARACTERISTICS(Cont.) Gain Bandwidth Product vs. Emitter Current Ta=25° C VCE = -5V 200 PNP SILICON TRANSISTOR Collector Output Capacitance, Cob (pF) 100 Collector Output Capacitance vs.Collector-Base Voltage Ta=25°C f=1MHz IE=0A Transition Frequency, fT(MHz) 50 100 50 20 20 -1 -2 -5 -10 -20 -50 -100 Emitter Current, IB (mA) Safe Operation Area 10 -0.5 -1 -2 -5 -10 -20 Collector to Base Voltage, VCB(V) Transient Thermal Resistance 1000 -5 -2 -1 PW Transient Thermal Resistance ( °C/W) Ta=25°C 100 s 0m =1 PW Collector Current, Ic (A) s* m 00 =1 DC -0.5 -0.2 -0.1 -0.05 Ta=25° C -0.02 *Single pulse -0.01 0 -0.2 -0.5 -1 -2 -5 -10 -20 -50 Collector to Emitter Voltage, VCE(V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw * 10 1 0.1 0.001 0.01 0.1 1 10 Time, t(s) 100 1000 4 of 4 QW-R208-016,B