2SB1151

UNISONIC TECHNOLOGIES CO., LTD 2SB1151 LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES *High Power Dissipation : PD=1.5W(Ta=25℃) *Complementary to 2SD1691. 1 PNP EPITAXIAL SILICON TRANSISTOR TO - 126 *Pb-free plating product number: 2SB1151L PIN CONFIGURATION PIN NO. PIN NAME 1 Emitter 2 Collector 3 Base ORDERING INFORMATION Order Number Normal Lead free 2SB1151-T60-T 2SB1151L-T60-T Package TO-126 Packing Tube www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., LTD 1 QW-R204-022,A 2SB1151 ABSOLUTE MAXIMUM RATING (Ta=25 ) PNP EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -7 V DC IC -5 A Collector Current -8 Pulse(Note 3) ICP Base Current IB -1 A Ta=25℃ 1.5 Power Dissipation PD W Tc=25℃ 20 Junction Temperature TJ 125 Operating Temperature TOPR 0 ~ +70 Storage Temperature TSTG -40 ~ +150 Note 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2.The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range and assured by design from -40℃~ 85℃. 3.PW ≤10ms, Duty Cycle ≤50% ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified.) PARAMETER Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain SYMBOL ICBO IEBO VCE(sat) VBE(sat) hFE 1 hFE 2 hFE 3 tON tSTG tF TEST CONDITIONS VCB=-50V, IE=0 VEB=-7V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-1V, IC=-0.1A VCE=-1V, IC=-2A VCE=-2V, IC=-5A OUTPUT MIN TYP MAX UNIT -10 µA -10 µA -0.14 -0.3 V -.0.9 -1.2 V 400 60 160 50 0.15 5Ω Turn On Time Switching Time Storage Time Fall Time 0 IB1 IB2 INPUT IB1 IB2 VCC=-10V 1 2.5 1 µS 20µsec -IB1=IB2=0.2A ≤ DUTY CYCLE 1% 0.78 0.18 Pulse test : PW ≤350 µS, Duty Cycle ≤2% Pulse CLASSIFICATION OF hFE2 RANK RANGE O 160 ~ 320 Y 200 ~ 400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 QW-R204-022,A 2SB1151 TYPICAL CHARACTERISTICS PD - Ta 25 Power Dissipation, PD (W) 20 15 10 5 0 0 50 100 150 200 250 TC =Ta INFINTE HEAT SINK PNP EPITAXIAL SILICON TRANSISTOR dT - T C 160 140 IC Derating, dT (%) 120 100 80 60 40 20 0 0 25 50 ip ss Di io at n d it e m Li S/ b Lim ite d 75 100 125 150 175 200 Ambient Temperature, Ta (℃) Case Temperature, T C (℃) Safe Oerating Area -10 Collector Current, I C（A） -5 -3 -1 -0.5 -0.3 I C (Pulse) MAX. IC (DC)MAX. Reverse Bias Safe Operating Area -10 Collector Current, IC（A） -8 -6 -4 -2 0 VCEO (SUS) 2m 10 s* ms 20 0m * s -0.1 -1 * SINGLE NONREPETIVE PULSED T a =25 ℃ CURVES MUST BE DERATED LINERLY WITH INCREASE IN TEMPERATURE VCEO( MAX) d ite m Li n ed io it a t im ip L iss S/b D -3 -5 -10 -30 -50 -100 -20 -40 -60 -80 -100 Collector-Emitter Voltage, VCE（V） Collector-Emitter Voltage, VCE（V） I C - VCE -10 Collector Current, I C（A） -8 h FE - IC 1K 500 300 100 50 30 10 5 3 1 -0.01 -0.03 -4 -2 IB = -20 0m A -6 IB=-40mA I B=-30mA IB=-20mA IB=-10mA IB =0mA Dc Current Gain, h FE A 50m 0mA mA -1 0 I B= =- 10 I =- 8 B IB IB =-60mA VCE=-2V VCE=-1V 0 -0.4 -0.8 -1.2 -1.6 -2.0 -0.1 -0.3 -1 -3 -10 Collector-Emitter Voltage, VCE（V） Collector Current, I C (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 QW-R204-022,A 2SB1151 TYPICAL CHARACTERISTICS VBE(Sat) , VCE(Sat) - IC -10 -5 -3 -1 -0.5 -0.2 -0.1 -0.05 -0.03 -0.01 VBE(sat) IC/I B=10 Staturation Voltage, VBE(Sat), VCE(Sat) (V) PNP EPITAXIAL SILICON TRANSISTOR VCE(sat) -0.03 -0.1 -0.3 -1 -3 -10 Collector Current, I C (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 QW-R204-022,A