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2SB1188L-E-AB3-R

2SB1188L-E-AB3-R

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    2SB1188L-E-AB3-R - MEDIUM POWER LOW VOLTAGE TRANSISTOR - Unisonic Technologies

  • 数据手册
  • 价格&库存
2SB1188L-E-AB3-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2SB1188 MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 PNP SILICON TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage SOT-89 *Pb-free plating product number: 2SB1188L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB1188-x-AB3-R 2SB1188L-x-AB3-R Package SOT-89 Pin Assignment 1 2 3 B C E Packing Tape Reel 2SB1188L-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) R: Tape Reel (2) AB3: SOT-89 (3) x: refer to Classification of hFE2 (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R208-041,A 2SB1188 ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) PNP SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector -Base Voltage VCBO -40 V Collector -Emitter Voltage VCEO -30 V Emitter -Base Voltage VEBO -5 V Peak Collector Current ICM -7 A DC Collector Current IC -3 A Base Current IB -0.6 A Power Dissipation PD 0.5 W ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current SYMBOL ICBO IEBO hFE1 DC Current Gain(Note 1) hFE2 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Current Gain Bandwidth Product fT Output Capacitance Cob Note 1: Pulse test: PW
2SB1188L-E-AB3-R 价格&库存

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