2SB1260-P-TN3-K

2SB1260-P-TN3-K

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    2SB1260-P-TN3-K - POWER TRANSISTOR - Unisonic Technologies

  • 详情介绍
  • 数据手册
  • 价格&库存
2SB1260-P-TN3-K 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2SB1260 POWER TRANSISTOR PNP SILICON TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity. *Low VCE(SAT) 1 TO-252 *Pb-free plating product number: 2SB1260L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T 2SB1260L-x-TN3-T Package SOT-89 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E B C E Packing Tape Reel Tape Reel Tube 2SB1260L-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) AB3: SOT-89, TN3: TO-252 (3) refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R208-017,C 2SB1260 ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage Peak Collector Current (single pulse, Pw=100ms) DC Collector Current Power Dissipation SOT-89 TO-252 SYMBOL VCBO VCEO VEBO ICM IC PD PNP SILICON TRANSISTOR RATINGS -80 -80 -5 -2 -1 0.5 1.9 +150 -40 ~ +150 UNIT V V V A A W W ℃ ℃ Operating Temperature TJ Storage Temperature TSTG Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm2 or larger. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER SYMBOL Collector Base Breakdown Voltage BVCBO Collector Emitter Breakdown Voltage BVCEO Emitter Base Breakdown Voltage BVEBO Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO DC Current Gain(Note 1) hFE Collector-Emitter Saturation Voltage VCE(SAT) Transition Frequency fT Output Capacitance Cob Note 1: Pulse test: PW
2SB1260-P-TN3-K
1. 物料型号: - 正常引脚电镀产品型号:2SB1260-x-AB3-R、2SB1260-x-TN3-R、2SB1260-x-TN3-T - 无铅电镀产品型号:2SB1260L-x-AB3-R、2SB1260L-x-TN3-R、2SB1260L-x-TN3-T

2. 器件简介: - UTC 2SB1260是一款外延平面型PNP硅晶体管,具有高击穿电压和高电流特性,同时还具备良好的hFE线性和低VCE(SAT)特性。

3. 引脚分配: - SOT-89封装:B、C、E(基极、集电极、发射极) - TO-252封装:B、C、E(基极、集电极、发射极)

4. 参数特性: - 绝对最大额定值:Vcbo=-80V、Vceo=-80V、Vebo=-5V、Icm=-2A、Ic=-1A - 功耗:SOT-89为0.5W,TO-252为1.9W - 工作温度:Tj=+150°C - 存储温度:Tstg=-40°C至+150°C

5. 功能详解: - 电气特性:包括击穿电压、截止电流、直流电流增益hFE、饱和电压VCE(SAT)、过渡频率fr和输出电容Cob等参数。

6. 应用信息: - UTC未对超出产品规格书中列出的额定值(例如最大额定值、工作条件范围或其他参数)导致的设备故障承担任何责任。UTC产品不设计用于生命维持器具、设备或系统,其中这些产品的故障可以合理预期会导致人身伤害。

7. 封装信息: - 封装类型包括SOT-89和TO-252两种,其中AB3代表SOT-89,TN3代表TO-252。 - 封装的电镀类型包括有铅和无铅两种,无铅电镀的产品型号带有后缀L。
2SB1260-P-TN3-K 价格&库存

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