2SB1260-X-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 2SB1260 POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. PNP SILICON TRANSISTOR FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) Lead-free: 2SB1260L Halogen-free: 2SB1260G ORDERING INFORMATION Normal 2SB1260-x-AB3-R 2SB1260-x-TN3-R Ordering Number Lead Free 2SB1260L-x-AB3-R 2SB1260L-x-TN3-R Halogen Free 2SB1260G-x-AB3-R 2SB1260G-x-TN3-R Package SOT-89 TO-252 Pin Assignment 1 2 3 B C E B C E Packing Tape Reel Tape Reel www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 4 QW-R208-017,E 2SB1260 ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage Peak Collector Current (single pulse, Pw=100ms) DC Collector Current Power Dissipation SOT-89 TO-252 SYMBOL VCBO VCEO VEBO ICM IC PD PNP SILICON TRANSISTOR RATINGS -80 -80 -5 -2 -1 0.5 1.9 +150 -40 ~ +150 UNIT V V V A A W W ℃ ℃ Junction Temperature TJ Storage Temperature TSTG Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm2 or larger. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER SYMBOL Collector Base Breakdown Voltage BVCBO Collector Emitter Breakdown Voltage BVCEO Emitter Base Breakdown Voltage BVEBO Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO DC Current Gain(Note 1) hFE Collector-Emitter Saturation Voltage VCE(SAT) Transition Frequency fT Output Capacitance Cob Note 1: Pulse test: PW