2SB1260-X-TN3-R

2SB1260-X-TN3-R

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    2SB1260-X-TN3-R - POWER TRANSISTOR - Unisonic Technologies

  • 详情介绍
  • 数据手册
  • 价格&库存
2SB1260-X-TN3-R 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2SB1260 POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. PNP SILICON TRANSISTOR FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) Lead-free: 2SB1260L Halogen-free: 2SB1260G ORDERING INFORMATION Normal 2SB1260-x-AB3-R 2SB1260-x-TN3-R Ordering Number Lead Free 2SB1260L-x-AB3-R 2SB1260L-x-TN3-R Halogen Free 2SB1260G-x-AB3-R 2SB1260G-x-TN3-R Package SOT-89 TO-252 Pin Assignment 1 2 3 B C E B C E Packing Tape Reel Tape Reel www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 4 QW-R208-017,E 2SB1260 ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage Peak Collector Current (single pulse, Pw=100ms) DC Collector Current Power Dissipation SOT-89 TO-252 SYMBOL VCBO VCEO VEBO ICM IC PD PNP SILICON TRANSISTOR RATINGS -80 -80 -5 -2 -1 0.5 1.9 +150 -40 ~ +150 UNIT V V V A A W W ℃ ℃ Junction Temperature TJ Storage Temperature TSTG Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm2 or larger. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER SYMBOL Collector Base Breakdown Voltage BVCBO Collector Emitter Breakdown Voltage BVCEO Emitter Base Breakdown Voltage BVEBO Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO DC Current Gain(Note 1) hFE Collector-Emitter Saturation Voltage VCE(SAT) Transition Frequency fT Output Capacitance Cob Note 1: Pulse test: PW
2SB1260-X-TN3-R
物料型号: - 型号:2SB1260 - 封装类型:SOT-89和TO-252 - 版本:普通铅锡(无标记)、无铅(L)、无卤素(G)

器件简介: - UTC 2SB1260是一款外延平面型PNP硅晶体管,具有高击穿电压和高电流特性。

引脚分配: - SOT-89封装:B(第1脚)、C(第2脚)、E(第3脚) - TO-252封装:B(第1脚)、C(第2脚)、E(第3脚)

参数特性: - 集电极-基极电压(VCBO):-80V - 集电极-发射极电压(VCEO):-80V - 发射极-基极电压(VEBO):-5V - 峰值集电极电流(ICM,单脉冲,脉宽100ms):-2A - DC集电极电流(Ic):-1A - 功耗(SOT-89):0.5W,(TO-252):1.9W - 结温(TJ):+150℃ - 存储温度(TSTG):-40~+150℃

功能详解: - 该晶体管具有良好的hFE线性和低VCE(SAT)特性,适用于需要高电压和大电流的应用。

应用信息: - 适用于需要高电压和大电流的应用场合,文档中未提供具体的应用示例。

封装信息: - 封装类型:SOT-89和TO-252 - 封装选项:普通铅锡(无标记)、无铅(L)、无卤素(G)
2SB1260-X-TN3-R 价格&库存

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