2SB1260G-Q-AB3-R

UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor.  FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT)  ORDERING INFORMATION Ordering Number 2SB1260G-x-AB3-R 2SB1260G-x-TN3-R Note: Pin Assignment: B: Base C: Collector  Package SOT-89 TO-252 Pin Assignment 1 2 3 B C E B C E Packing Tape Reel Tape Reel E: Emitter MARKING SOT-89 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd TO-252 1 of 4 QW-R208-017.F 2SB1260  PNP SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS ( TA=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector -Base Voltage VCBO -80 V Collector -Emitter Voltage VCEO -80 V Emitter -Base Voltage VEBO -5 V Peak Collector Current (single pulse, Pw=100ms) ICM -2 A DC Collector Current IC -1 A SOT-89 0.5 W Power Dissipation PD TO-252 1.9 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm2 or larger. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS ( TA=25°C, unless otherwise specified ) PARAMETER SYMBOL Collector Base Breakdown Voltage BVCBO Collector Emitter Breakdown Voltage BVCEO Emitter Base Breakdown Voltage BVEBO Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO DC Current Gain(Note 1) hFE Collector-Emitter Saturation Voltage VCE(SAT) Transition Frequency fT Output Capacitance Cob Note 1: Pulse test: PW