2SB1260L-R-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 2SB1260 POWER TRANSISTOR PNP SILICON TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity. *Low VCE(SAT) 1 TO-252 *Pb-free plating product number: 2SB1260L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB1260-x-AB3-R 2SB1260L-x-AB3-R 2SB1260-x-TN3-R 2SB1260L-x-TN3-R 2SB1260-x-TN3-T 2SB1260L-x-TN3-T Package SOT-89 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E B C E Packing Tape Reel Tape Reel Tube 2SB1260L-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (1) B: Tape Box, K: Bulk, R: Tape Reel (2) AB3: SOT-89, TN3: TO-252 (3) refer to Classification of hFE (4) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R208-017,C 2SB1260 ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER Collector -Base Voltage Collector -Emitter Voltage Emitter -Base Voltage Peak Collector Current (single pulse, Pw=100ms) DC Collector Current Power Dissipation SOT-89 TO-252 SYMBOL VCBO VCEO VEBO ICM IC PD PNP SILICON TRANSISTOR RATINGS -80 -80 -5 -2 -1 0.5 1.9 +150 -40 ~ +150 UNIT V V V A A W W ℃ ℃ Operating Temperature TJ Storage Temperature TSTG Note 1. Printed circuit board,1.7mm thick, collector copper plating 100mm2 or larger. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER SYMBOL Collector Base Breakdown Voltage BVCBO Collector Emitter Breakdown Voltage BVCEO Emitter Base Breakdown Voltage BVEBO Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO DC Current Gain(Note 1) hFE Collector-Emitter Saturation Voltage VCE(SAT) Transition Frequency fT Output Capacitance Cob Note 1: Pulse test: PW