2SB1386-Q-AB3-B-R

UNISONIC TECHNOLOGIES CO., LTD 2SB1386 LOW FREQUENCY PNP TRANSISTOR 1 PNP SILICON TRANSISTOR FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) SOT-89 *Pb-free plating product number: 2SB1386L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SB1386-x-AB3-F-R 2SB1386L-x-AB3-F-R Package SOT-89 Pin Assignment 1 2 3 B C E Packing Tube www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 5 QW-R208-019,B 2SB1386 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Collector-Emitter Voltage VEBO -6 V Collector Current (DC) IC(DC) -5 A Collector Current (Pulse)(Note1) IC(PULSE) -10 A Collector Power Dissipation PC 0.5 W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note 1. Single pulse, Pw=10ms 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS(Ta=25°C, unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Transition Frequency Output Capacitance SYMBOL BVCBO BVCEO BVEBO VCE(SAT) ICBO IEBO hFE fT Cob TEST CONDITIONS IC= -50μA IC= -1mA IE= -50μA IC/IB= -4A/-0.1A VCB= -20V VEB= -5V VCE= -2V, IC= -0.5A VCE= -6V, IE= 50mA, f=30MHz VCB= -20V, IE= 0A, f=1MHz MIN -30 -20 -6 TYP MAX UNIT V V V V μA μA MHz pF 82 120 60 -1.0 -0.5 -0.5 390 CLASSIFICATION OF hFE RANK RANGE P 82-180 Q 120-270 R 180-390 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R208-019,B 2SB1386 TYPICAL CHARACTERISTICS PNP SILICON TRANSISTOR -10 -5 VCE = -2V -2 -1 -500m -200m -100m -50m -20m -10m -5m -2m -1m 0 Collector Current vs. Base to Emitter Voltage -5 -4 Collector Current vs. Collector to Emitter Voltage -50mA -45mA -30mA Ta=25℃ -25mA -20mA -15mA Ta=100℃ Ta=25℃ Ta= -25℃ -3 -10mA -2 -35mA -40mA -5mA -1 0 0 IB =0mA -0.4 -0.8 -1.2 -1.6 -2.0 Collector to Emitter Voltage, VCE(V) -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 Base to Emitter Voltage, VBE(V) DC Current Gain vs. Collector Current(1) 5k 2k 1k 500 200 100 50 20 10 5 -1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10 Collector Current, Ic(A) VcE= -5V VcE= -2V VcE= -1V Ta=25℃ DC Current Gain vs. Collector Current(2) 5k 2k 1k 500 200 100 50 20 10 5 -1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10 Collector Current, IC(A) Ta=100℃ VcE= -1V Ta=25℃ Ta= -25℃ DC Current Gain vs. Collector Current 5k VcE= -2V 2k 1k 500 200 100 50 20 10 5 -1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10 Collector Current, Ic(A) Ta=100℃ -0.5 Ta= -25℃ -0.2 Ta=25℃ -0.1 -0.05 -5 -2 -1 Collector-Emitter Saturation Voltage vs. Collector Current (1) Ta=25℃ Ic/IB=50/1 40/1 30/1 10/1 -0.02 -0.01 -0.2 -2m -5m-0.01-0.02-0.05 -0.1 -0.5-1 -2 -5 -10 Collector Current, Ic(A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R208-019,B 2SB1386 TYPICAL CHARACTERICS(Cont.) PNP SILICON TRANSISTOR Ic/IB=10 -2 -1 -0.5 -0.2 -0.1 -0.05 Ta=25℃ -0.02 -0.01 -2m -5m Ta= -25℃ -0.2 -0.01-0.02-0.05 -0.1 -0.5 -1 Collector Saturation Voltage, VCE(SAT) ( V) Collector Saturation Voltage, VCE(SAT) (V) -5 Collector-Emitter Saturation Voltage vs. Collector Current (2) -5 -2 -1 -0.5 -0.2 -0.1 -0.05 Collector-Emitter Saturation Voltage vs. Collector Current (3) Ic/IB=30 Ta=100℃ Ta=25℃ Ta=100℃ Ta= -25℃ -0.02 -0.01 -2m -2 -5 -10 Collector Current, Ic(A) Collector-Emitter Saturation Voltage vs. Collector Current (IV) Ic/IB=40 Ta= -25℃ Ta=25℃ Collector Saturation Voltage, VCE(SAT)(V) -0.2 -5m-0.01-0.02-0.05 -0.1 -0.5-1 -2 -5 -10 Collector Current, Ic(A) Collector Saturation Voltage, VCE(SAT) ( V) -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 Collector-Emitter Saturation Voltage vs. Collector Current (V) Ic/IB=50 Ta= -25℃ Ta=25℃ Ta=100℃ Ta=100℃ -0.02 -0.01 -2m -5m -0.2 -0.01-0.02-0.05 -0.1 -0.5 -1 -2 -5 -10 -0.02 -0.01 -2m Collector Current, Ic(A) -0.2 -5m-0.01-0.02-0.05 -0.1 -0.5-1 -2 -5 -10 Collector Current, Ic(A) Collector Output Capacitance, Cob (pF) Transetion Frequency vs. Emitter Current 1000 500 Transetion Frequency, fT (MHz) 200 100 50 20 10 5 2 1 1 Ta=25℃ VcE= -6V 1000 500 200 100 50 20 Collector Output Capacitance vs. Collector-Base Voltage Ta=25℃ f =1MHz IE=0A 2 5 10 20 50 100200 500 1000 Emitter Current, IE(mA) 10 -5 -10 -20 -0.1 -0.2 -0.5 -1 -2 Collector to Base Voltage, VCB(V) -50 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R208-019,B 2SB1386 TYPICAL CHARACTERICS(Cont.) PNP SILICON TRANSISTOR 1000 Emitter Input Capacitance, Cib (pF) 500 Emitter Input Capacitance vs. EmitterBase Voltage Ic=0A 200 100 50 Ta=25℃ f=1MHz -0.2 -0.5 -1 -2 -5 -10 Emitter To Base Voltage, VEB(V) 20 -0.1 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R208-019,B