UNISONIC TECHNOLOGIES CO., LTD
2SB1412
PNP SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
DESCRIPTION
The UTC 2SB1412 is an epitaxial planar type PNP silicon
transistor.
FEATURES
* Excellent DC current gain characteristics
* Low VCE(SAT)
VCE(SAT)= -0.35V (Typ)
(IC/IB = -4A/-0.1A)
ORDERING INFORMATION
Ordering Number
Package
Lead Free
Halogen Free
2SB1412L-x-TN3-R
2SB1412G-x-TN3-R
TO-252
Note: Pin Assignment: B: Base C: Collector
E: Emitter
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
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QW-R209-021.E
2SB1412
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current(DC)
IC
-5
A
Collector Current(PULSE) Single pulse, Pw=10ms
ICP
-10
A
Collector Power Dissipation
1
W
PD
Collector Power Dissipation (TC=25C) (note2)
10
W
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-40 ~ +150
C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. When mounted on a 40×40×0.7mm ceramic board.
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(SAT)
fT
COB
TEST CONDITIONS
IC= -50μA
IC= -1mA
IE= -50μA
VCB= -20V
VEB= -5V
VCE= -2V,Ic= -0.5A
IC/IB= -4A/-0.1A
VCE= -6V, IE= 50 mA, f=30MHz
VCB= -20V, IE= 0 A, f=1MHz
MIN
-30
-20
-6
82
TYP MAX UNIT
V
V
V
-0.5
μA
-0.5
μA
390
-1.0
V
120
MHz
60
pF
CLASSIFICATION OF hFE
RANK
RANGE
P
82-180
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Q
120-270
R
180-390
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2SB1412
TYPICAL CHARACTERISTICS
Grounded Emitter Propagation
Characteristics
Grounded Emitter Output
Characteristics
-2
-1
-500m
-5
Ta=100℃
Collector Current: Ic(A)
Collector Current: Ic(mA)
-10
-5 VCE = -2V
Ta=25℃
-200m
-100m
-50m
Ta= -25℃
-20m
-10m
-5m
-2m
-1m
0
-0.2 -0.4 -0.6 -0.8
-30mA Ta=25℃
-25mA
-20mA
-15mA
-3
-10mA
-35mA
-2
-40mA
-5mA
-1
-0.4
-0.8
-1.2
IB =0mA
-1.6
-2.0
Base to Emitter Voltage:VBE(V)
Collector to Emitter Voltage:VCE(V)
DC Current Gain vs.Collector Current (I)
DC Current Gain vs.Collector
Current(II)
5k
Ta=25℃
1k
500
VcE= -5V
200
100
VcE= -2V
VcE= -1V
50
VcE= -1V
2k
DC Current Gain: hFE
2k
DC Current Gain: hFE
-4
-50mA
-45mA
0
0
-1.0 -1.2 -1.4
5k
1k
500
200
100
Ta=100℃
Ta=25℃
Ta= -25℃
50
20
10
20
10
5
-1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10
5
-1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current : Ic(A)
Collector Current : Ic(A)
5k
VcE= -2V
2k
1k
Ta=100℃
500
200
100
Ta= -25℃
Ta=25℃
50
20
10
5
-1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10
Collector Current : Ic(A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Saturation Voltage:VCE(SAT) ( V)
DC Current Gain vs.Collector Current (III)
DC Current Gain: hFE
PNP SILICON TRANSISTOR
-5
Collector-emitter Saturation Voltage
vs.Collector Current (I)
Ta=25℃
-2
-1
-0.5
-0.2
-0.1
Ic/IB=50/1
40/1
30/1
10/1
-0.05
-0.02
-0.01
-2m -5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current : Ic(A)
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2SB1412
-2
-1
-0.5
-0.2
-0.1
Ta=100℃
-0.05
Ta=25℃
-0.02
-0.01
-2m -5m
-5
Ta= -25℃
-0.01-0.02-0.05 -0.1-0.2-0.5-1
-2 -5 -10
Ic/IB=30
-2
-1
Ta=100℃
-0.5
Ta=25℃
-0.2
-0.1
-0.05
Ta= -25℃
-0.02
-0.01
-2m
-5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10
Collector Current : Ic(A)
Collector-emitter Saturation Voltage
vs.Collector Current (IV)
Collector-emitter Saturation Voltage
vs.Collector Current (V)
Ic/IB=40
Ta= -25℃
-1
Ta=25℃
-0.5
-0.2
Ta=100℃
-0.1
-0.05
-5
Ic/IB=50
Ta= -25℃
-2
Ta=25℃
-1
Ta=100℃
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
-2m -5m
-0.02
-0.01
-2m
-0.01-0.02-0.05 -0.1-0.2-0.5-1
-2 -5 -10
Collector Current : Ic(A)
Gain Bandwidth Product vs.Emitter
Current
Ta=25℃
VcE= -6V
500
200
100
50
20
10
5
2
1
1
-5
Collector-emitter Saturation Voltage
vs.Collector Current (III)
Collector Current : Ic(A)
-2
1000
Collector Saturation Voltage:VCE(SAT) ( V)
Ic/IB=10
Collector Saturation Voltage:VCE(SAT)
( V)
-5
Collector-emitter Saturation Voltage
vs.Collector Current (II)
2
5
10 20
50 100200 500 1000
Emitter Current : IE(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Output Capacitance :Cob (pF)
Collector Saturation Voltage:VCE(SAT) ( V)
Collector Saturation Voltage:VCE(SAT) ( V)
TYPICAL CHARACTERISTICS(Cont.)
Transetion Frequency :fT (MHz)
PNP SILICON TRANSISTOR
1000
-5m-0.01-0.02-0.05 -0.1-0.2-0.5-1 -2 -5 -10
Collector Current : Ic(A)
Collector Output Capacitance
vs.Collector-Base Voltage
Ta=25℃
f =1MHz
IE=0A
500
200
100
50
20
10
-0.1 -0.2 -0.5 -1
-2
-5
-10 -20
-50
Collector to Base Voltage:VCB (V)
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2SB1412
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS(Cont.)
Emitter Input Capacitance:Cib (pF)
1000
Emitter Input Capacitance vs.EmitterBase Voltage
Ta=25℃
f=1MHz
Ic=0A
500
200
100
50
20
-0.1
-0.2
-0.5 -1
-2
-5 -10
Emitter To Base Voltage : VEB(V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-021.E
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