2SB649AL-C-TN3-R

UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-89 SOT-223  APPLICATIONS 1 * Low frequency power amplifier complementary pair with UTC 2SD669/A 1 TO-252 TO-92 1 1 TO-126 TO-92NL 1 1 TO-126C  TO-126S ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB649XL-x-AA3-R 2SB649xG-x-AA3-R 2SB649XL-x-AB3-R 2SB649xG-x-AB3-R 2SB649xL-x-TN3-R 2SB649xG-x-TN3-R 2SB649xL-x-T60-K 2SB649xG-x-T60-K 2SB649xL-x-T6C-K 2SB649xG-x-T6C-K 2SB649xL-x-T6S-K 2SB649xG-x-T6S-K 2SB649xL-x-T92-B 2SB649xG-x-T92-B 2SB649xL-x-T92-K 2SB649xG-x-T92-K 2SB649xL-x-T9N-B 2SB649xG-x-T9N-B 2SB649xL-x-T9N-K 2SB649xG-x-T9N-K Note: Pin Assignment: C: Collector B: Base E: Emitter www.unisonic.com.tw Copyright © 2017 Unisonic Technologies Co., Ltd Package SOT-223 SOT-89 TO-252 TO-126 TO-126C TO-126S TO-92 TO-92 TO-92NL TO-92NL Pin Assignment 1 2 3 B C E B C E B C E E C B E C B E C B E C B E C B E C B E C B Packing Tape Reel Tape Reel Tape Reel Bulk Bulk Bulk Tape Box Bulk Tape Box Bulk 1 of 5 QW-R204-006.K 2SB649/A  PNP SILICON TRANSISTOR MARKING MARKING PACKAGE 2SB649 2SB649A SOT-223 SOT-89 TO-252 TO-92 TO-92NL L: Lead Free G: Halogen Free UTC 2SB649 Data Code L: Lead Free G: Halogen Free UTC 2SB649A Data Code TO-126 TO-126C TO-126S UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R204-006.K 2SB649/A  PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO -180 V 2SB649 -120 V Collector-Emitter Voltage VCEO 2SB649A -160 V Emitter-Base Voltage VEBO -5 V Collector Current IC -1.5 A Collector Peak Current lC(PEAK) -3 A SOT-89 0.5 W SOT-223 1 W TO-92/TO-92NL 0.6 W Power Dissipation PD TO-126 1 W TO-126C/TO-126S 1.3 TO-252 2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER SOT-89 SOT-223 TO-92/ TO-92NL Junction to Case TO-126 TO-126C/TO-126S TO-252  RATINGS 38 15 80 6.25 10 4.5 θJC UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector to Base Breakdown Voltage Collector to Emitter 2SB649 Breakdown Voltage 2SB649A Emitter to Base Breakdown Voltage Collector Cut-off Current 2SB649 DC Current Gain 2SB649A Collector-Emitter Saturation Voltage Base-Emitter Voltage Current Gain Bandwidth Product Output Capacitance Note: Pulse test.  SYMBOL SYMBOL TEST CONDITIONS BVCBO IC=-1mA, IE=0 BVCEO IC=-10mA, RBE= BVEBO ICBO hFE1 hFE2 hFE1 hFE2 VCE(SAT) VBE fT Cob IE=-1mA, IC=0 VCB=-160V, IE=0 VCE=-5V, IC=-150mA (note) VCE=-5V, IC=-500mA (note) VCE=-5V, IC=-150mA (note) VCE=-5V, IC=-500mA (note) IC=-600mA, IB=-50mA VCE=-5V, IC=-150mA VCE=-5V,IC=-150mA VCB=-10V, IE=0, f=1MHz MIN -180 -120 -160 -5 TYP MAX UNIT V V -10 320 60 30 60 30 V μA 200 -1 -1.5 140 27 V V MHz pF CLASSIFICATION OF hFE1 RANGE 2SB649 2SB649A B 60-120 60-120 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RANK C 100-200 100-200 D 160-320 - 3 of 5 QW-R204-006.K 2SB649/A PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS Typical Output Characteristecs IB=0 250 25°С 200 -25°С 150 100 50 -1 Base to Emitter Saturation Voltage, VBE(SAT) (V) -1.2 -1.0 Base to Emitter Saturation Voltage vs. Collector Current IC=10IB 25°С T C=25°С 75°С -0.6 -0.4 -0.2 -3 -10 -30 -100 -300 -1000 Collector Current, IC (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 -0.2 -0.4 -0.6 -0.8 -1.0 Base to Emitter Voltage, VBE (V) Collector to Emitter Saturation Voltage vs. Collector Current IC=10 IB -1.0 -0.8 -0.6 -0.4 5°С =7 TC -0.2 0 -10 -100 -1,000 Collector Current, IC (mA) -0.8 0 -1 -1.2 Collector to Emitter Saturation Voltage, VCE(SAT) (V) DC Current Transfer Ratio vs. Collector Current 350 VCE=-5V 5°С 300 Ta=7 1 -1 -10 -20 -30 -40 -50 Collector to Emitter Voltage, VCE (V) Gain Bandwidth Product, fT (MHz) DC Current Transfer Ratio, hFE 0 TC=25°С -1 -2 5° 2 С 5°С -0.5mA 0.2 -10 -25°С -1.0 -100 5°С -1.5 0.4 VCE=-5V Ta=7 -4 . -2.0 0W 0.6 =2 PD Collector Current, IC (A) 0.8 0 -4. 5 -3. 0 -3. 5 -2. Typical Transfer Characteristics -500 Collector Current, IC (mA) 5 -5 .0 -5 .5 1.0 25°С  -10 -100 Collector Current, IC (mA) -1,000 Gain Bandwidth Product vs. Collector Current -240 VCE=5V Ta=25°С -200 -160 -120 -80 -40 0 -10 -30 -100 -300 Collector Current, IC (mA) -1000 4 of 5 QW-R204-006.K 2SB649/A TYPICAL CHARACTERISTICS(Cont.) Collector Current, IC (A) Collector Output Capacitance, Cob (pF)  PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R204-006.K