UNISONIC TECHNOLOGIES CO., LTD 2SB649/A
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
1
PNP SILICON TRANSISTOR
1
SOT-89
TO-252
APPLICATIONS * Low frequency power amplifier complementary pair with UTC
2SD669/A
1 1
TO-92
TO-92NL
1
1
TO-126
TO-126C
Lead-free: 2SB649L/2SB649AL Halogen-free: 2SB649G/2SB649AG
ORDERING INFORMATION
Normal 2SB649x-x-AB3-R 2SB649x-x-T6C-K 2SB649x-x-T60-K 2SB649x-x-T92-B 2SB649x-x-T92-K 2SB649x-x-T9N-B 2SB649x-x-T9N-K 2SB649x-x-TN3-R Ordering Number Lead Free 2SB649xL-x-AB3-R 2SB649xL-x-T6C-K 2SB649xL-x-T60-K 2SB649xL-x-T92-B 2SB649xL-x-T92-K 2SB649xL-x-T9N-B 2SB649xL-x-T9N-K 2SB649xL-x-TN3-R Halogen Free 2SB649xG-x-AB3-R 2SB649xG-x-T6C-K 2SB649xG-x-T60-K 2SB649xG-x-T92-B 2SB649xG-x-T92-K 2SB649xG-x-T9N-B 2SB649xG-x-T9N-K 2SB649xG-x-TN3-R Package SOT-89 TO-126C TO-126 TO-92 TO-92 TO-92NL TO-92NL TO-252 Pin Assignment 1 2 3 B C E E C B E C B E C B E C B E C B E C B B C E Packing Tape Reel Bulk Bulk Tape Box Bulk Tape Box Bulk Tape Reel
2SB649xL-x-AB3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating (5) Collector-Emitter Voltage
(1) B: Tape Box, K: Bulk, R: Tape Reel (2) AB3: SOT-89, T6C: TO-126C, T60: TO-126, (2) T92: TO-92, T9N: TO-92NL, TN3: TO-252 (3) x: refer to Classification of hFE1 (4) G: Halogen Free, L: Lead Free, Blank: Pb/Sn (5) A: -160V, Blank: -120V
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QW-R204-006,G
2SB649/A
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO -180 V 2SB649 -120 V Collector-Emitter Voltage VCEO 2SB649A -160 V Emitter-Base Voltage VEBO -5 V Collector Current IC -1.5 A Collector Peak Current lC(PEAK) -3 A TO-126/TO-126C 1 W TO-92/TO-92NL 0.6 W Collector Power Dissipation PC SOT-89 0.5 W TO-252 2 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS Collector to Base Breakdown Voltage BVCBO IC=-1mA, IE=0 Collector to Emitter Breakdown 2SB649 BVCEO IC=-10mA, RBE=∞ Voltage 2SB649A Emitter to Base Breakdown Voltage BVEBO IE=-1mA, IC=0 Collector Cut-off Current ICBO VCB=-160V, IE=0 hFE1 VCE=-5V, IC=-150mA (note) 2SB649 hFE2 VCE=-5V, IC=-500mA (note) DC Current Gain hFE1 VCE=-5V, IC=-150mA (note) 2SB649A hFE2 VCE=-5V, IC=-500mA (note) Collector-Emitter Saturation Voltage VCE(SAT) IC=-600mA, IB=-50mA Base-Emitter Voltage VBE VCE=-5V, IC=-150mA Current Gain Bandwidth Product fT VCE=-5V,IC=-150mA Output Capacitance Cob VCB=-10V, IE=0, f=1MHz Note: Pulse test. MIN -180 -120 -160 -5 60 30 60 30 TYP MAX UNIT V V -10 320 200 -1 -1.5 140 27 V V MHz pF V μA
CLASSIFICATION OF hFE1
RANGE 2SB649 2SB649A B 60-120 60-120 RANK C 100-200 100-200 D 160-320 -
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www.unisonic.com.tw
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2SB649/A
TYPICAL CHARACTERISTICS
Typical Output Characteristecs
-5 .5
PNP SILICON TRANSISTOR
Typical Transfer Characteristics -500 Collector Current, IC (mA) VCE=-5V
1.0 0.8 0.6 0.4 0.2
Collector Current, IC (A)
0 -4. 5 -3. 0 -3. 5 -2.
-4 .
5 -5
.0
-100
5°С
=2 PD 0W
-2.0 -1.5 -1.0 -0.5mA IB=0
-10
TC=25°С
0
-10 -20 -30 -40 -50 Collector to Emitter Voltage, VCE (V)
-1
0
-0.2 -0.4 -0.6 -0.8 -1.0 Base to Emitter Voltage, VBE (V) Collector to Emitter Saturation Voltage vs. Collector Current
DC Current Transfer Ratio, hFE
Collector to Emitter Saturation Voltage, VCE(SAT) (V)
DC Current Transfer Ratio vs. Collector Current 350 VCE=-5V 5°С 300 Ta=7 250 200 150 100 50 1 -1 -10 -100 -1,000 Collector Current, IC (mA) Base to Emitter Saturation Voltage vs. Collector Current IC=10IB
25°С T C=25°С 75°С -25°С 25°С
-1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0
IC=10 IB
Ta=7
25°С
-25°С
5°С =7 TC
-1
-10 -100 Collector Current, IC (mA)
-1.2 Base to Emitter Saturation Voltage, VBE(SAT) (V) -1.0 -0.8 -0.6 -0.4 -0.2 0 -1
Gain Bandwidth Product, fT (MHz)
Gain Bandwidth Product vs. Collector Current -240 VCE=5V Ta=25°С -200 -160 -120 -80 -40 0 -10
-3
-10 -30 -100 -300 -1000 Collector Current, IC (mA)
-30 -100 -300 Collector Current, IC (mA)
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-2 5° 2 С 5°С
-1,000
-1000
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2SB649/A
TYPICAL CHARACTERISTICS(Cont.)
PNP SILICON TRANSISTOR
Collector Output Capacitance, Cob (pF)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Collector Current, IC (A)
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