2SB772G-X-TM3-T

2SB772G-X-TM3-T

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    2SB772G-X-TM3-T - MEDIUM POWER LOW VOLTAGE TRANSISTOR - Unisonic Technologies

  • 详情介绍
  • 数据手册
  • 价格&库存
2SB772G-X-TM3-T 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2SB772 MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. PNP SILICON TRANSISTOR FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882 Lead Free:1 Halogen Free: 2SB772L 2SB772G ORDERING INFORMATION Normal 2SB772-x-T60-K 2SB772-x-T6C-K 2SB772-x-TM3-T 2SB772-x-TN3-R 2SB772-x-T9N-B 2SB772-x-T9N-K Ordering Number Lead Free 2SB772L-x-T60-K 2SB772L-x-T6C-K 2SB772L-x-TM3-T 2SB772L-x-TN3-R 2SB772L-x-T9N-B 2SB772L-x-T9N-K Halogen Free 2SB772G-x-T60-K 2SB772G-x-T6C-K 2SB772G-x-TM3-T 2SB772G-x-TN3-R 2SB772G-x-T9N-B 2SB772G-x-T9N-K Package TO-126 TO-126C TO-251 TO-252 TO-92NL TO-92NL Pin Assignment 1 2 3 E C B E C B B C E B C E E C B E C B Packing Bulk Bulk Tube Tape Reel Tape Box Bulk www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 4 QW-R213-016,E 2SB772 ABSOLUTE MAXIMUM RATINGS (Ta = 25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (Ta=25℃) TO-92NL TO-251/TO-252/ TO-126/TO-126C DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC PNP SILICON TRANSISTOR RATINGS -40 -30 -5 -3 -7 -0.6 0.5 1 UNIT V V V A A A W W ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current Emitter Cut-Off Current SYMBOL BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE1 DC Current Gain(Note 1) hFE2 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Current Gain Bandwidth Product fT Output Capacitance Cob Note 1: Pulse test: PW
2SB772G-X-TM3-T
物料型号: - 2SB772-x-T60-K:TO-126封装,标准铅 - 2SB772L-x-T60-K:TO-126封装,无铅 - 2SB772G-x-T60-K:TO-126封装,无卤素 - 2SB772-x-T6C-K:TO-126C封装,标准铅 - 2SB772L-x-T6C-K:TO-126C封装,无铅 - 2SB772G-x-T6C-K:TO-126C封装,无卤素 - 2SB772-x-TM3-T:TO-251封装,标准铅 - 2SB772L-x-TM3-T:TO-251封装,无铅 - 2SB772G-x-TM3-T:TO-251封装,无卤素 - 2SB772-x-TN3-R:TO-252封装,标准铅 - 2SB772L-x-TN3-R:TO-252封装,无铅 - 2SB772G-x-TN3-R:TO-252封装,无卤素 - 2SB772-x-T9N-B:TO-92NL封装,标准铅 - 2SB772L-x-T9N-B:TO-92NL封装,无铅 - 2SB772G-x-T9N-B:TO-92NL封装,无卤素 - 2SB772-x-T9N-K:TO-92NL封装,标准铅

器件简介: UTC 2SB772是一款中等功率、低电压PNP晶体管,适用于音频功率放大器、DC-DC转换器和电压调节器。

引脚分配: - TO-126、TO-126C、TO-92NL封装:E(发射极)、C(集电极)、B(基极) - TO-251、TO-252封装:B(基极)、C(集电极)、E(发射极)

参数特性: - 集电极-基极电压(VcBO):-40V - 集电极-发射极电压(VCEO):-30V - 发射极-基极电压(VEBO):-5V - 集电极电流(DC/脉冲Ic):-3A/-7A - 基极电流(IB):-0.6A - 集电极耗散功率:TO-92NL为0.5W,其他封装为1W - 结温(TJ):+150°C - 存储温度(TSTG):-55~+150°C

功能详解: 2SB772晶体管具有高达3A的高电流输出和低饱和电压,与2SD882互补使用。

应用信息: 适用于音频功率放大器、DC-DC转换器和电压调节器。
2SB772G-X-TM3-T 价格&库存

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