2SB798

UTC 2SB798 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. 1 FEATURES *Low Collector Saturation Voltage: VCE(sat)< -0.4V (Ic= -1.0A,IB=-100mA ) *Excellent DC Current Gain Linearity : hFE=100 Typ.(VCE= -1.0V,Ic=-1.0A) SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VCEO VEBO RATING -30 -25 -5.0 -1.0 -1.5 2 150 -55 ~ +150 UNIT V V V A A W °C °C DC Pulse(note 1) Ic Collector Dissipation (note 2) PC Junction Temperature Tj Storage Temperature TSTG Note 1: PW≦10ms,Duty Cycle≦50% Note 2: When mounted on a ceramic substrate of 16cm2×0.7 mm. ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain DC Current Gain Base to Emitter Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain Bandwidth Product Output Capacitance Note 3: PW≦350μs,Duty Cycle≦2% SYMBOL ICBO IEBO hFE1 hFE2 VBE VCE(sat) VBE(sat) fT Cob TEST CONDITIONS VCB= -30V , IE= 0 VEB= -5.0V, Ic= 0 VCE= -1.0V,Ic= -100mA VCE= -1.0V,Ic= -1.0A VCE= -6.0V,Ic= -10mA Ic= -1.0A,IB= -0.10A Ic= -1.0A,IB= -0.10A VCE= -6.0V, IE= 10 mA VCB= -6.0V, IE= 0, f=1MHz MIN TYP MAX -100 -100 400 -700 -0.40 -1.2 UNIT nA nA 90 50 -600 200 100 -640 -0.25 -1.0 110 36 mV V V MHz pF CLASSIFICATION OF hFE1 MARKING hFE1 DM 90-180 DL 135-270 DK 200-400 UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R208-020,A UTC 2SB798 PNP EPITAXIAL SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS CURVES 2.5 PT-Total Power Dissipation -W 2.0 Collector Dissipation vs. Ambient Temperature When mounted on a ceramic substrate of 16cm2*0.7mm -1000 Collector Current vs. Base to Emitter Voltage VCE=-0.6V -500 PULSED Ic-Collector Current -mA -200 -100 -50 -20 -10 -5 -2 -1 -0.4 Ta=75℃ Ta= 25℃ 1.5 Ta=-25 ℃ 1.0 0.5 0 0 50 100 150 Ta-Ambient Temperature - 200 ℃ 250 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 VBE-Base to Emitter Voltage-V -100 -80 Collector Current vs. Collector to Emitter Voltage μA -450 IB = μ 0A IB =-40 0μA IB=-35 -1000 -800 Collector Current vs. Collector to Emitter Voltage I B= -4.0mA I B = -4.5mA I B = -5.0mA Ic-Collector Current -mA -60 μ 0A IB =-25 μ 0A IB =-20 Ic-Collector Current -mA μ 0A IB =-30 I B= -3.5mA -600 IB= -3.0mA IB= -2.5mA I B=-2.0mA -40 -20 0 0 IB =-150μA -400 -200 0 0 I B=-1.5mA IB =-1.0mA IB =-0.5mA IB =-100μA IB =-50μA IB =0 -2 -4 -6 -8 -10 VCE -Collector to Emitter Voltage -V -0.4 -1.2 -1.6 -2.0 -0.8 VCE -Collector to Emitter Voltage -V UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R208-020,A UTC 2SB798 PNP EPITAXIAL SILICON TRANSISTOR DC Current Gain vs.Collector Current V BE (sat)-Base Saturation Voltage -V V CE =1.0V Pulsed V CE (sat)-Collector Saturation Voltage -V Collector And Base Saturation Voltage vs.Collector Current Ic=10*I B P ulsed -10 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 hFE-DC Current G ain 1000 500 200 100 50 20 10 -1 -2 -5 -10 -20 -50 -100 -200 -500 -1 -2 -5 V BE (sat) T a=75 ℃ T a=25 ℃ T a=-25 ℃ V CE (sat) -1 -2 -5 -10 -20 -50 -100 -200 -500 -1 -2 -5 Ic-Collector Current -A Ic-Collector Current -A 1000 fT -Gain Bandwidth Product -MHz Gain Bandwidth Product vs.Emitter Current 100 Output Capacitance vs. Collec tor to Bas e Voltage I E =0 f=1.0MHz 500 V CE =-6.0V Cob-Output Capacitance -pF 50 200 100 20 10 V CE =-1.0V 50 5 20 10 1 2 5 10 20 50 100 200 500 1000 2 1 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100 V CB -Collector to Base Voltage-V IE -E mitter Current -mA UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R208-020,A