2SB798G-X-AB3-R

UNISONIC TECHNOLOGIES CO., LTD 2SB798 POWER TRANSISTOR DESCRIPTION The UTC 2SB798 is designed for audio frequency power amplifier applications, especially in Hybrid Integrated Circuits. 1 PNP EPITAXIAL SILICON TRANSISTOR FEATURES * Low Collector Saturation Voltage: VCE(sat)< -0.4V (Ic = -1.0A, IB = -100mA ) * Excellent DC Current Gain Linearity : hFE = 100 Typ. (VCE = -1.0V, IC = -1.0A) SOT-89 ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB798L-X-AB3-R 2SB798G-X-AB3-R 2SB798L-X-AB3-R Package SOT-89 Pin Assignment 1 2 3 B C E Packing Tape Reel (1)Packing Type (2)Package Type (3)Rank (4)Lead Free (1) R: Tape Reel (2) AB3: SOT-89 (3) x: refer to Classification of hFE1 (4) Halogen Free, L: Lead Free www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 of 4 QW-R208-020.B 2SB798 ABSOLUTE MAXIMUM RATINGS (TA=25°C) PNP EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5.0 V DC -1.0 A Collector Current IC Pulse(Note 1) -1.5 A Collector Dissipation (Note 2) PC 2 W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 1. PW≦10ms,Duty Cycle≦50% 2 2. When mounted on a ceramic substrate of 16cm ×0.7 mm. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL Collector Cut-Off Current ICBO Emitter Cut-Off Current IEBO DC Current Gain hFE1 DC Current Gain hFE2 Base to Emitter Voltage VBE Collector-Emitter Saturation VCE(sat) Voltage Base-Emitter Saturation Voltage VBE(sat) Gain Bandwidth Product fT Output Capacitance Cob Note: 3. PW≦350μs, Duty Cycle≦2% TEST CONDITIONS VCB= -30V , IE= 0 VEB= -5.0V, IC= 0 VCE= -1.0V, IC= -100mA VCE= -1.0V, IC= -1.0A VCE= -6.0V, IC= -10mA IC= -1.0A, IB= -0.10A IC= -1.0A, IB= -0.10A VCE= -6.0V, IE= 10mA VCB= -6.0V, IE= 0, f=1MHz MIN TYP MAX -100 -100 400 -700 -0.40 -1.2 UNIT nA nA 90 50 -600 200 100 -640 -0.25 -1.0 110 36 mV V V MHz pF CLASSIFICATION OF hFE1 MARKING hFE1 DM 90-180 DL 135-270 DK 200-400 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R208-020.B 2SB798 TYPICAL CHARACTERISTICS Collector Dissipation vs. Ambient Temperature 2.5 When mounted on a ceramic substrate of 16cm2 *0.7mm 2.0 1.5 1.0 0.5 0 0 PNP EPITAXIAL SILICON TRANSISTOR Collector Current vs. Base to Emitter Voltage VCE=-0.6V PULSDE -1000 -500 -200 -100 -50 -20 -10 -5 50 100 150 200 250 ) Ambient Temperature, Ta ( -2 -1 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 Base to Emitter Voltage, VBE (V) Collector Current, IC (mA) Collector Current, IC (mA) VCE=1.0V PULSED Base Saturation Voltage, VBE(sat) (V) Collector Saturation Voltage, VCE(sat) (V) DC Current Gain vs.Collector Current Collector and Base Saturation Voltage vs. Collector Current -10 -5 -2 -1 -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 VCE(sat) VBE(sat) IC=10*IB 500 200 100 50 20 10 Collector Current, IC (A) Ta=-25 Ta=75 Ta=25 -1 -2 -5 -10 -20-50-100-200-500-1-2 -5 DC Current Gain, hFE 1000 Collector Current, IC (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R208-020.B 2SB798 1000 Gain Bandwidth Product, fT (MHz) 500 200 100 50 20 10 1 2 5 10 20 50100 2005001000 Emitter Current, IE (mA) VCE=-6.0V VCE=-1.0V Gain Bandwidth Product vs. Emitter Current PNP EPITAXIAL SILICON TRANSISTOR 100 Output Capacitance, Cob (pF) 50 20 10 5 2 1 -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50-100 Collector to Base Voltage, VCB (V) Output Capacitance vs. Collector to Base Voltage IE=0 f=1.0MHz UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R208-020.B