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2SB824L-X-T60-K

2SB824L-X-T60-K

  • 厂商:

    UTC(友顺)

  • 封装:

  • 描述:

    2SB824L-X-T60-K - PNP PLANAR SILICON TRANSISTOR - Unisonic Technologies

  • 数据手册
  • 价格&库存
2SB824L-X-T60-K 数据手册
UNISONIC TECHNOLOGIES CO., LTD 2SB824 PNP PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage: VCE(SAT)=-0.4V max/IC=-3A, IB=-0.3A PNP SILICON TRANSISTOR 1 SOT-89 1 TO-126 Lead-free: 2SB772SL Halogen-free: 2SB772SG ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB824L-x-AB3-R 2SB824G-x-AB3-R 2SB824L-x-T60-K 2SB824G-x-T60-K Package SOT-89 TO-126 Pin Assignment 1 2 3 B C E B C E Packing Tape Reel Bulk www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 5 QW-R208-042.B 2SB824 ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) SYMBOL VCBO VCEO VEBO IC ICP PNP SILICON TRANSISTOR RATINGS UNIT -60 V -50 V -6 V -5 A -9 A SOT-89 500 mW Collector Dissipation PC TO-126 1 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Gain Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Turn-ON Time Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 fT Cob VCE(SAT) tON tSTG tF TEST CONDITIONS IC =-1mA, IE=0 IC=-1mA, RBE =∞ IC =0, IE=-1mA VCB=-40V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-1A VCE=-2V, IC=-3A VCE =-5V, IC =-1A VCB =-10V, f=1MHz IC=-3A, IB=-0.3A See specified test circuit See specified test circuit See specified test circuit MIN -60 -50 -6 TYP MAX UNIT V V V mA mA 70 30 30 100 -0.1 -0.1 360 -0.4 0.1 1.4 0.2 MHZ pF V μs μs μs CLASSIFICATION of hFE1 RANK RANGE Q 70-140 R 100-200 S 180-360 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R208-042.B 2SB824 SWITCHING TIME TEST CIRCUIT IB1 1 IN PW=20µs tr×tf≤15ns 50 1µ (For NPN, the polarity is reversed) 10IB1= 10IB2=IC=-2A -5V IB2 100 PNP SILICON TRANSISTOR OUT 10 1µ 20V Unit (resistance: Ω,capacitance: F) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R208-042.B 2SB824 TYPICAL CHARACTERISTICS PNP SILICON TRANSISTOR Collector Current, -IC (A) -500 mA Collector Current, -IC (A) Ta=8 0 DC Current Gain vs. Collector Current 7 5 VCE=-2V Ta=80℃ Collector-Emitter Saturation Voltage, -VCE (SAT) (V) 1000 10 5 3 2 Collector-Emitter Saturation Voltage vs. Collector Current IC/IB=10 DC Current Gain, hFE 3 2 25℃ -20℃ 1.0 5 3 2 100 7 5 3 2 0.1 5 3 2 2 3 5 = Ta -20℃ 25 80 -20℃ 25℃ 10 0.01 2 3 5 0.1 2 3 5 1.0 2 3 Collector Current, -IC (A) 5 10 2 0.01 0.1 2 3 5 1.0 2 3 5 Collector Current, -IC (A) 10 2 Collector-Emitter Saturation Voltage, -VCE(SAT) (V) 10 5 3 2 Collector-Emitter Saturation Voltage vs. Collector Current Base-Emitter Saturation Voltage, -VBE(SAT) (V) IC/IB=20 10 7 5 3 2 Base-Emitter Saturation Voltage vs. Collector Current 1.0 5 3 2 0 =8 Ta 1.0 7 5 3 2 2 3 5 IC/IB=10 IC/IB=20 0.1 5 3 2 2 3 5 2 3 5 -20℃ 25℃ 0.01 1.0 0.1 Collector Current, -IC (A) 2 3 5 10 2 1.0 0.1 Collector Current, -IC (A) 2 3 5 2 3 5 10 2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R208-042.B 2SB824 TYPICAL CHARACTERISTICS(Cont.) PNP SILICON TRANSISTOR Collector Current , -IC (A) 10 0m s s 1m ms 10 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Transition frequency, fT (MHz) DC er a Op ti o n 5 of 5 QW-R208-042.B
2SB824L-X-T60-K 价格&库存

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